LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
TI HP4936DYT product image
Images for reference only

TI HP4936DYTRoHS

Manufacturer
TI
MPN
HP4936DYT
LCSC Part #
C3279914
Packaging
SOIC-8
Customer #
Key Attributes
5.8A 2W 37mΩ@10V 1V 2 N-Channel SOIC-8 FET, MOSFET Arrays RoHS
Datasheetpdf iconTI HP4936DYT
Out of Stock
Notify Me
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit Price(Reference Only)Total Amount
1+$ 0.276$ 0.28
200+$ 0.1069$ 21.38
500+$ 0.1031$ 51.55
1,000+$ 0.1013$ 101.30
Standard Packaging98/Full Tube
Better price for more quantity?
$

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerTI
PackagingSOIC-8
Current - Continuous Drain(Id)5.8A
Pd - Power Dissipation2W
RDS(on)37mΩ@10V
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)50pF
Number2 N-Channel
Input Capacitance(Ciss)625pF
Gate Charge(Qg)25nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)270pF
Report an ErrorShow similar products (0) >

Introduction

AI Translation

This power MOSFET is manufactured using an innovative process technology. This advanced process achieves the lowest possible on-resistance per unit silicon area, delivering outstanding performance. The device can withstand high energy in avalanche mode, and its diode features extremely short reverse recovery time and minimal stored charge. It is designed for applications demanding high power efficiency, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-powered products.

Features

AI Translation
  • Logic-level gate drive
  • rDS(ON) = 0.037 Ω at ID = 5.8 A, VGS = 10 V
  • rDS(ON) = 0.055 Ω at ID = 4.7 A, VGS = 4.5 V

Applications

AI Translation
  • Load Switch - Power Amplifier Switch