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onsemi SI9926DY product image
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onsemi SI9926DYRoHS

Manufacturer
MPN
SI9926DY
LCSC Part #
C3279833
Packaging
SOIC-8
Customer #
Key Attributes
Dual N-Channel, Current:6.5A, Voltage:20V
Datasheetpdf icononsemi SI9926DY
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1+$ 0.2429$ 0.24
200+$ 0.094$ 18.80
500+$ 0.0907$ 45.35
1,000+$ 0.0891$ 89.10
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
Manufactureronsemi
PackagingSOIC-8
Current - Continuous Drain(Id)6.5A
Pd - Power Dissipation2W
RDS(on)43mΩ@2.5V
Gate Threshold Voltage (Vgs(th))1.5V
Drain to Source Voltage20V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)85pF
Number2 N-Channel
Input Capacitance(Ciss)700pF
Gate Charge(Qg)10nC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)175pF

Introduction

AI Translation

These 2.5V-rated N-channel MOSFETs are fabricated using the advanced PowerTrench process. Optimized for power management applications with a wide range of gate drive voltages (2.5V – 10V).

Features

AI Translation
  • 6.5 A, 20 V
  • RDS(ON) = 0.030 Ω at VGS = 4.5 V
  • RDS(ON) = 0.043 Ω at VGS = 2.5 V
  • Optimized for battery protection circuit applications
  • ±10 V VGS wide operating voltage range
  • Low gate charge

Applications

AI Translation
  • Battery protection
  • Load switch
  • Power management