Advanced Linear Devices ALD111933SAL

The ALD11933 is a high-precision monolithic dual N-channel enhancement-mode matched-pair MOSFET array, factory-matched using ALD's proven EPAD CMOS technology. The device is designed for precision nanopower, low-voltage, small-signal applications. Both MOSFET devices in the ALD11933 feature precisely matched +3.30V threshold voltages with a maximum offset voltage of 20mV. These two key characteristics enable ultra-low-power (nanopower) precision comparator circuit functions, where the threshold voltage itself can serve as a zero (near-zero drain current) power coarse voltage reference.

The ALD11933 MOSFETs are designed and manufactured for excellent device electrical characteristic matching. Since these devices reside on the same monolithic die, they also exhibit outstanding temperature coefficient tracking. Each device is highly versatile as a circuit element and serves as a useful design component for a wide variety of precision analog applications. They are fundamental building blocks for current mirror, current source, differential amplifier input stage, transmission gate, and multiplexer applications. For most applications, connect the V− and IC pins to the lowest negative voltage potential in the system on the PCB. All other pin voltages must remain within the V+ and V− voltage limits.

The ALD11933 device is engineered to achieve minimum offset voltage and differential thermal response, suitable for switching and amplification applications in +3.0V to +10V systems that require low input bias current, low input capacitance, and fast switching speed. As MOSFET devices, they exhibit very large (nearly infinite) current gain at low-frequency or near-DC operating conditions. The high input impedance and high DC current gain of FETs result in extremely low current draw through the gate input, enabling control with minimal input power and supporting circuit functions at nanopower consumption levels.

• Enhancement mode (normally-on)
• Precise gate threshold voltage: +3.30V
• Parameter matching between MOSFETs
• Tight lot-to-lot parameter control
• MOSFETs in parallel for increased drain current
• Low input capacitance
• VGS(th) matching (offset voltage) to 20mV
• High input impedance — typical 10^12 Ω
• Positive, zero, and negative VGS(th) temperature coefficients
• DC current gain >10^8
• Low input and output leakage current

• Precision current mirrors
• Precision current sources
• Voltage choppers
• Differential amplifier input stages
• Discrete voltage comparators
• Voltage bias circuits
• Sample-and-hold circuits
• Analog inverters
• Level translators
• Source followers and buffers
• Current multipliers
• Discrete analog multiplexers/matrices
• Discrete analog switches
• Low-current voltage clamps
• Voltage detectors
• Capacitive probes
• Sensor interfaces
• Peak detectors
• Multiple preset voltage hysteresis circuits (used with other VGS(TH) EPAD MOSFETs)
• Energy harvesting circuits
• Zero standby power voltage monitors