onsemi FDSS2407S_B82086
| Manufacturer | |
| MPN | FDSS2407S_B82086 |
| LCSC Part # | C3279815 |
| Packaging | SOIC-8 |
| Customer # | |
| Key Attributes | 3.3A 2.27W 132mΩ@5V 3V 2 N-Channel SOIC-8 FET, MOSFET Arrays RoHS |
| Datasheet |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SOIC-8 | |
| Current - Continuous Drain(Id) | 3.3A | |
| Pd - Power Dissipation | 2.27W | |
| RDS(on) | 132mΩ@5V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 62V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 300pF | |
| Gate Charge(Qg) | 4.3nC@1V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 140pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SOIC-8 | |
| Current - Continuous Drain(Id) | 3.3A | |
| Pd - Power Dissipation | 2.27W | |
| RDS(on) | 132mΩ@5V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 62V |
| Type | Description | |
|---|---|---|
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 300pF | |
| Gate Charge(Qg) | 4.3nC@1V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 140pF |
Introduction
Compared to conventional power MOSFETs, this dual N-channel MOSFET offers additional features, including: a drain-source voltage feedback signal and gate drive disable control functionality that previously required external discrete circuitry. Integrating these features within the MOSFET saves PCB space. When the drain-source voltage exceeds 62V, the drain-source voltage feedback function provides a 5V logic output that can monitor the time required for an inductive load to dissipate its stored energy. Multiple feedback signals can be OR-connected to a single input of a monitoring circuit. The gate disable function allows the device to turn off independently of the drive signal on the gate, enabling a second control circuit to deactivate the load when necessary; it can also be OR-connected, allowing multiple devices to be controlled by a single open-collector/open-drain control transistor.
Features
- 62V, 132mΩ, 5V logic-level gate dual MOSFET in SO-8 package
- 5V logic-level feedback signal of drain-to-source voltage; multiple devices can be "OR"-connected to a single monitoring circuit input
- Gate drive disable input; multiple devices controllable by a single disable transistor
- AEC Q101 compliant
Applications
- Automotive Injector Driver - Solenoid Driver
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.8122 | $ 0.81 |
| 200+ | $ 0.3145 | $ 62.90 |
| 500+ | $ 0.3048 | $ 152.40 |
| 1,000+ | $ 0.2983 | $ 298.30 |
Standard Packaging2500/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SOIC-8 | |
| Current - Continuous Drain(Id) | 3.3A | |
| Pd - Power Dissipation | 2.27W | |
| RDS(on) | 132mΩ@5V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 62V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 300pF | |
| Gate Charge(Qg) | 4.3nC@1V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 140pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SOIC-8 | |
| Current - Continuous Drain(Id) | 3.3A | |
| Pd - Power Dissipation | 2.27W | |
| RDS(on) | 132mΩ@5V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 62V |
| Type | Description | |
|---|---|---|
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 300pF | |
| Gate Charge(Qg) | 4.3nC@1V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 140pF |
Introduction
Compared to conventional power MOSFETs, this dual N-channel MOSFET offers additional features, including: a drain-source voltage feedback signal and gate drive disable control functionality that previously required external discrete circuitry. Integrating these features within the MOSFET saves PCB space. When the drain-source voltage exceeds 62V, the drain-source voltage feedback function provides a 5V logic output that can monitor the time required for an inductive load to dissipate its stored energy. Multiple feedback signals can be OR-connected to a single input of a monitoring circuit. The gate disable function allows the device to turn off independently of the drive signal on the gate, enabling a second control circuit to deactivate the load when necessary; it can also be OR-connected, allowing multiple devices to be controlled by a single open-collector/open-drain control transistor.
Features
- 62V, 132mΩ, 5V logic-level gate dual MOSFET in SO-8 package
- 5V logic-level feedback signal of drain-to-source voltage; multiple devices can be "OR"-connected to a single monitoring circuit input
- Gate drive disable input; multiple devices controllable by a single disable transistor
- AEC Q101 compliant
Applications
- Automotive Injector Driver - Solenoid Driver
C3279815 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

