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onsemi SI4936DY product image
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onsemi SI4936DYRoHS

Manufacturer
onsemi
MPN
SI4936DY
LCSC Part #
C3279814
Packaging
SOIC-8
Customer #
Key Attributes
Dual N-Channel, Current:5.8A, Voltage:30V
Datasheetpdf icononsemi SI4936DY
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1+$ 0.9829$ 0.98
200+$ 0.3812$ 76.24
500+$ 0.3673$ 183.65
1,000+$ 0.3611$ 361.10
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
Manufactureronsemi
PackagingSOIC-8
Current - Continuous Drain(Id)5.8A
Pd - Power Dissipation2W
RDS(on)55mΩ@4.5V
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)45pF
Number2 N-Channel
Input Capacitance(Ciss)460pF
Gate Charge(Qg)25nC@10V
Operating Temperature-55℃~+150℃
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Introduction

AI Translation

These N-channel enhancement-mode MOSFETs are fabricated using an advanced process specifically designed to minimize on-resistance while maintaining superior switching performance. These devices are ideal for low-voltage and battery-powered applications requiring low on-state power dissipation and fast switching.

Features

AI Translation
  • 5.8 A, 30 V; R DS(ON) = 0.037 Ω at V GS = 10 V
  • R DS(ON) = 0.055 Ω at V GS = 4.5 V
  • Low gate charge
  • Fast switching speed
  • High power and current handling capability

Applications

AI Translation
  • Battery Switch - Load Switch - Motor Control