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VISHAY SI7942DP-T1-GE3
| Manufacturer | |
| MPN | SI7942DP-T1-GE3 |
| LCSC Part # | C3279567 |
| Packaging | PowerPAK-SO-8-Dual |
| Customer # | |
| Key Attributes | MOSFET N-CH ARR 100V 5.9A PowerPAK-SO-8-Dual |
| Datasheet |  VISHAY SI7942DP-T1-GE3 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | PowerPAK-SO-8-Dual | |
| Current - Continuous Drain(Id) | 5.9A | |
| Pd - Power Dissipation | 3.5W | |
| RDS(on) | 60mΩ@6V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Drain to Source Voltage | 100V | |
| Type | N-Channel | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 24nC@10V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | PowerPAK-SO-8-Dual | |
| Current - Continuous Drain(Id) | 5.9A | |
| Pd - Power Dissipation | 3.5W | |
| RDS(on) | 60mΩ@6V | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Drain to Source Voltage | 100V | |
| Type | N-Channel | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 24nC@10V | |
| Operating Temperature | -55℃~+150℃ |
Introduction
Dual N-Channel 100V (D-S) MOSFET. PowerPAK is a new packaging technology. The PowerPAK SO-8 shares the same footprint and pin-out as the standard SO-8, making it a drop-in replacement. It is a leadless package that utilizes the entire SO-8 footprint, accommodating a larger die than the standard SO-8. The exposed connection pad on the bottom of the die provides a direct, low-resistance thermal path to the substrate on which the device is mounted. In addition, the package height is lower than the standard SO-8, making it suitable for space-constrained applications.
Features
- Halogen-free product compliant with IEC 61249-2-21
- TrenchFET power MOSFET
- New low thermal resistance PowerPAK package
- Dual MOSFET space-saving design
Applications
- Synchronous buck anti-shoot-through
- Primary-side switch optimized
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 3.8325 | $ 3.83 |
| 10+ | $ 3.7676 | $ 37.68 |
| 30+ | $ 3.7253 | $ 111.76 |
| 100+ | $ 3.6831 | $ 368.31 |
Standard Packaging3000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | PowerPAK-SO-8-Dual | |
| Current - Continuous Drain(Id) | 5.9A | |
| Pd - Power Dissipation | 3.5W | |
| RDS(on) | 60mΩ@6V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Drain to Source Voltage | 100V | |
| Type | N-Channel | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 24nC@10V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | PowerPAK-SO-8-Dual | |
| Current - Continuous Drain(Id) | 5.9A | |
| Pd - Power Dissipation | 3.5W | |
| RDS(on) | 60mΩ@6V | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Drain to Source Voltage | 100V | |
| Type | N-Channel | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 24nC@10V | |
| Operating Temperature | -55℃~+150℃ |
Introduction
Dual N-Channel 100V (D-S) MOSFET. PowerPAK is a new packaging technology. The PowerPAK SO-8 shares the same footprint and pin-out as the standard SO-8, making it a drop-in replacement. It is a leadless package that utilizes the entire SO-8 footprint, accommodating a larger die than the standard SO-8. The exposed connection pad on the bottom of the die provides a direct, low-resistance thermal path to the substrate on which the device is mounted. In addition, the package height is lower than the standard SO-8, making it suitable for space-constrained applications.
Features
- Halogen-free product compliant with IEC 61249-2-21
- TrenchFET power MOSFET
- New low thermal resistance PowerPAK package
- Dual MOSFET space-saving design
Applications
- Synchronous buck anti-shoot-through
- Primary-side switch optimized
C3279567 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |