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VISHAY SIR638ADP-T1-RE3 product image
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VISHAY SIR638ADP-T1-RE3RoHS

Manufacturer
VISHAY
MPN
SIR638ADP-T1-RE3
LCSC Part #
C3279537
Packaging
PowerPAK-SO-8
Customer #
Key Attributes
MOSFET N-CH 40V 53A PowerPAK-SO-8
Datasheetpdf iconVISHAY SIR638ADP-T1-RE3
In-Stock: 1,206
1,206 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 1.688$ 1.69
10+$ 1.4833$ 14.83
30+$ 1.381$ 41.43
100+$ 1.2786$ 127.86
500+$ 1.1422$ 571.10
1,000+$ 1.1113$ 1111.30
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVISHAY
PackagingPowerPAK-SO-8
Drain to Source Voltage40V
Output Capacitance(Coss)1.65nF
Current - Continuous Drain(Id)53A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation104W
Reverse Transfer Capacitance (Crss@Vds)210pF
RDS(on)0.88mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)9.1nF
Gate Charge(Qg)53nC@10V
TypeN-Channel
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Introduction

AI Translation

This article introduces an N-channel 40V (D-S) MOSFET in a PowerPAK SO-8 single package. The MOSFET is a TrenchFET Gen IV power MOSFET, 100% tested for Rg and UIS, with a Qgd/Qgs ratio less than 1 for optimized switching performance. Applications covered include synchronous rectification, OR-ing, and high power density DC/DC conversion. The PowerPAK package technology is also described: developed from the SO-8 footprint with identical land pattern and pin-out, it is a leadless package capable of accommodating a larger die, featuring an exposed bottom die-attach pad for a low-resistance thermal path, and a package height lower than standard SO-8, making it suitable for space-constrained applications.

Features

AI Translation
  • TrenchFET Gen IV power MOSFET, 100% Rg and UIS tested
  • Qgd/Qgs ratio < 1, optimized switching characteristics

Applications

AI Translation
  • Synchronous rectification
  • OR-ing
  • High power density DC/DC
  • VRMs and embedded DC/DC
  • DC/AC inverters