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VISHAY SIJH112E-T1-GE3 product image
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VISHAY SIJH112E-T1-GE3RoHS

Manufacturer
VISHAY
MPN
SIJH112E-T1-GE3
LCSC Part #
C3279480
Packaging
PowerPAK-5(8x8)
Customer #
Key Attributes
MOSFET N-CH 100V 225A PowerPAK-5(8x8)
Datasheetpdf iconVISHAY SIJH112E-T1-GE3
In-Stock: 8
8 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 3.3978$ 3.40
10+$ 3.3189$ 33.19
30+$ 3.2658$ 97.97
100+$ 3.2127$ 321.27
Standard Packaging2000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVISHAY
PackagingPowerPAK-5(8x8)
Drain to Source Voltage100V
Current - Continuous Drain(Id)225A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation333W
Reverse Transfer Capacitance (Crss@Vds)29pF
RDS(on)3.6mΩ@7.5V
Number1 N-channel
Input Capacitance(Ciss)8.05nF
Gate Charge(Qg)160nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2000
Sales UnitPiece

Features

AI Translation
  • TrenchFET Gen IV power MOSFET
  • Fully lead (Pb)-free device
  • Low Qg, Qgd, and Qgd/Qgs ratio
  • RoHS HALOGEN FREE
  • Up to 200 A maximum continuous drain current
  • 50% smaller footprint than D2PAK (TO - 263)
  • 100% Rg and UIS tested

Applications

AI Translation
  • Synchronous rectification
  • OR - ing
  • Motor drive control
  • Battery management