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Infineon IPD096N08N3GATMA1 product image
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Infineon IPD096N08N3GATMA1RoHS

Manufacturer
Infineon
MPN
IPD096N08N3GATMA1
LCSC Part #
C3279028
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 80V 73A TO-252
Datasheetpdf iconInfineon IPD096N08N3GATMA1

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-252
Drain to Source Voltage80V
Output Capacitance(Coss)652pF
Current - Continuous Drain(Id)73A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)9.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.41nF
Gate Charge(Qg)35nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

CoolMOS™ is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. The CoolMOS™ C7 series combines the experience of a leading SJ MOSFET supplier with best-in-class innovation. This product portfolio delivers all the advantages of fast-switching SJ MOSFETs, offering higher efficiency, lower gate charge, ease of implementation, and outstanding reliability.

Features

AI Translation
  • Ideal for high frequency switching
  • Optimized technology for DC/DC converters
  • Excellent gate charge x RDS(on) product (FOM)
  • N-channel, normal level
  • 100% avalanche tested
  • Pb-free plating; RoHS compliant
  • Qualified according to JEDEC for target applications
  • Halogen-free according to IEC61249-2-21

Applications

AI Translation
  • PFC stages and hard-switching PWM stages in applications such as computers, servers, telecommunications, UPS, and solar energy.
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.9218$ 0.92
10+$ 0.7446$ 7.45
30+$ 0.6568$ 19.70
100+$ 0.5706$ 57.06
500+$ 0.517$ 258.50
1,000+$ 0.491$ 491.00
Standard Packaging2500/Full Reel
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