Infineon IPG20N04S409AATMA1
| Manufacturer | |
| MPN | IPG20N04S409AATMA1 |
| LCSC Part # | C3278693 |
| Packaging | TDSON-8 |
| Customer # | |
| Key Attributes | 20A 54W 8.6mΩ@10V 4V 2 N-Channel TDSON-8 FET, MOSFET Arrays RoHS |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Infineon | |
| Packaging | TDSON-8 | |
| Current - Continuous Drain(Id) | 20A | |
| Pd - Power Dissipation | 54W | |
| RDS(on) | 8.6mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Drain to Source Voltage | 40V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 2.25nF | |
| Gate Charge(Qg) | 28nC@10V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 570pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Infineon | |
| Packaging | TDSON-8 | |
| Current - Continuous Drain(Id) | 20A | |
| Pd - Power Dissipation | 54W | |
| RDS(on) | 8.6mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Drain to Source Voltage | 40V |
| Type | Description | |
|---|---|---|
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 2.25nF | |
| Gate Charge(Qg) | 28nC@10V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 570pF |
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Features
AI Translation
- Dual N-channel Normal Level - Enhancement mode
- AEC Q101 qualified
- MSL1 up to 260℃ peak reflow
- 175℃ operating temperature
- Green Product (RoHS compliant)
- 100% Avalanche tested
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.5577 | $ 0.56 |
| 200+ | $ 0.2156 | $ 43.12 |
| 500+ | $ 0.2092 | $ 104.60 |
| 1,000+ | $ 0.2043 | $ 204.30 |
Standard Packaging5000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Infineon | |
| Packaging | TDSON-8 | |
| Current - Continuous Drain(Id) | 20A | |
| Pd - Power Dissipation | 54W | |
| RDS(on) | 8.6mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Drain to Source Voltage | 40V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 2.25nF | |
| Gate Charge(Qg) | 28nC@10V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 570pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Infineon | |
| Packaging | TDSON-8 | |
| Current - Continuous Drain(Id) | 20A | |
| Pd - Power Dissipation | 54W | |
| RDS(on) | 8.6mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Drain to Source Voltage | 40V |
| Type | Description | |
|---|---|---|
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 2.25nF | |
| Gate Charge(Qg) | 28nC@10V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 570pF |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Dual N-channel Normal Level - Enhancement mode
- AEC Q101 qualified
- MSL1 up to 260℃ peak reflow
- 175℃ operating temperature
- Green Product (RoHS compliant)
- 100% Avalanche tested
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

