Infineon BSO220N03MDGXUMA1
| Manufacturer | |
| MPN | BSO220N03MDGXUMA1 |
| LCSC Part # | C3278510 |
| Packaging | SOIC-8 |
| Customer # | |
| Key Attributes | Dual N-channel MOSFET, Current: 7.7A, Voltage: 30V |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Infineon | |
| Packaging | SOIC-8 | |
| Current - Continuous Drain(Id) | 7.7A | |
| Pd - Power Dissipation | 1.4W | |
| RDS(on) | 22mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Drain to Source Voltage | 30V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 800pF | |
| Gate Charge(Qg) | 10nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 310pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Infineon | |
| Packaging | SOIC-8 | |
| Current - Continuous Drain(Id) | 7.7A | |
| Pd - Power Dissipation | 1.4W | |
| RDS(on) | 22mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Drain to Source Voltage | 30V |
| Type | Description | |
|---|---|---|
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 800pF | |
| Gate Charge(Qg) | 10nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 310pF |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
These high-durability devices are designed for high VSWR industrial, scientific, and medical applications, as well as radio and VHF television broadcasting, sub-1 GHz, and mobile radio applications. Their unmatched input and output design allows operation across a wide frequency range of 1.8 to 500 MHz.
Features
AI Translation
- Dual N-channel
- Optimized for 5V drive applications (notebooks, VGA, point-of-load power supplies)
- Low switching figure of merit for high-frequency switching power supplies
- 100% avalanche tested
- Ultra-low on-resistance RDS(on) at VGS = 4.5V
- Excellent gate charge × RDS(on) product (figure of merit)
- Suitable for consumer applications
- Lead-free plating; RoHS compliant
- Halogen-free per IEC61249-2-21
Applications
AI Translation
- Industrial, Scientific, Medical (ISM)
- Laser generation
- Plasma etching
- Particle accelerators
- MRI and other medical applications
- Industrial heating, welding, and drying systems
- Broadcasting
- Radio broadcasting
- VHF TV broadcasting
- Mobile Radio
- VHF and UHF base stations
In-Stock: 1,020
1,020 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.5784 | $ 0.58 |
| 10+ | $ 0.4728 | $ 4.73 |
| 30+ | $ 0.4273 | $ 12.82 |
| 100+ | $ 0.3721 | $ 37.21 |
| 500+ | $ 0.3461 | $ 173.05 |
| 1,000+ | $ 0.3315 | $ 331.50 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Infineon | |
| Packaging | SOIC-8 | |
| Current - Continuous Drain(Id) | 7.7A | |
| Pd - Power Dissipation | 1.4W | |
| RDS(on) | 22mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Drain to Source Voltage | 30V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 800pF | |
| Gate Charge(Qg) | 10nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 310pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Infineon | |
| Packaging | SOIC-8 | |
| Current - Continuous Drain(Id) | 7.7A | |
| Pd - Power Dissipation | 1.4W | |
| RDS(on) | 22mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Drain to Source Voltage | 30V |
| Type | Description | |
|---|---|---|
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 800pF | |
| Gate Charge(Qg) | 10nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 310pF |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
These high-durability devices are designed for high VSWR industrial, scientific, and medical applications, as well as radio and VHF television broadcasting, sub-1 GHz, and mobile radio applications. Their unmatched input and output design allows operation across a wide frequency range of 1.8 to 500 MHz.
Features
AI Translation
- Dual N-channel
- Optimized for 5V drive applications (notebooks, VGA, point-of-load power supplies)
- Low switching figure of merit for high-frequency switching power supplies
- 100% avalanche tested
- Ultra-low on-resistance RDS(on) at VGS = 4.5V
- Excellent gate charge × RDS(on) product (figure of merit)
- Suitable for consumer applications
- Lead-free plating; RoHS compliant
- Halogen-free per IEC61249-2-21
Applications
AI Translation
- Industrial, Scientific, Medical (ISM)
- Laser generation
- Plasma etching
- Particle accelerators
- MRI and other medical applications
- Industrial heating, welding, and drying systems
- Broadcasting
- Radio broadcasting
- VHF TV broadcasting
- Mobile Radio
- VHF and UHF base stations
C3278510 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



