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Advanced Linear Devices ALD110900APAL product image
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Advanced Linear Devices ALD110900APALRoHS

Manufacturer
Advanced Linear Devices
MPN
ALD110900APAL
LCSC Part #
C3278498
Packaging
PDIP-8
Customer #
Key Attributes
12mA 500mW 500Ω@4V 20mV 2 N-Channel PDIP-8 FET, MOSFET Arrays RoHS
Datasheetpdf iconAdvanced Linear Devices ALD110900APAL
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200+$ 1.7436$ 348.72
500+$ 1.6819$ 840.95
1,000+$ 1.6526$ 1652.60
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerAdvanced Linear Devices
PackagingPDIP-8
Configuration-
Current - Continuous Drain(Id)12mA
Pd - Power Dissipation500mW
RDS(on)500Ω@4V
Gate Threshold Voltage (Vgs(th))20mV
Drain to Source Voltage10V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)0.1pF
Number2 N-Channel
Input Capacitance(Ciss)-
Gate Charge(Qg)-
Operating Temperature0℃~+70℃
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Introduction

AI Translation

ALD110800A/ALD110800/ALD110900A/ALD110900 are high-precision monolithic quad/dual N-channel MOSFETs. They are designed for low-voltage small-signal applications, featuring zero threshold voltage characteristics to reduce or eliminate voltage level shift from input to output. These matched MOSFETs are designed for excellent electrical parameter matching, with threshold voltage precisely set to +0.00V ±0.01V and typical offset voltage of only ±0.001V (1mV). They also feature excellent temperature coefficient tracking characteristics. As design components, they are suitable for a wide range of analog applications. Each individual MOSFET also exhibits well-controlled parameters. These devices are designed for minimum offset voltage and differential thermal response, targeting switching and amplification applications in +0.2V to +10V systems that require low input bias current, low input capacitance, and fast switching speed. The VGS(th) of these devices is set to +0.00V, making them both enhancement-mode and depletion-mode devices. With the gate set to 0.00V, the drain current is +1μA at VDS = 0.1V. These devices exhibit well-controlled turn-off and subthreshold characteristics typical of standard enhancement-mode MOSFETs. ALD110800A/ALD110800/ALD110900A/ALD110900 feature high input impedance (10^12Ω) and high DC current gain (>10^8).

Features

AI Translation
  • Precise zero threshold voltage mode
  • Nominal RDS(ON) of 104 KΩ at VGS = 0.00V
  • Matched characteristics between MOSFETs
  • Tight lot-to-lot parameter control
  • VGS(th) matching (VOS) maximum 2mV and 10mV
  • Positive, zero, and negative VGS(th) temperature coefficients
  • Low input capacitance
  • Low input/output leakage current

Applications

AI Translation
  • Energy harvesting circuits
  • Ultra-low voltage analog and digital circuits
  • Zero-power fail-safe circuits
  • Backup battery circuits and power failure detectors
  • Low-level voltage clamps and zero-crossing detectors
  • Source followers and buffers
  • Precision current mirrors and current sources
  • Capacitive probe and sensor interfaces
  • Charge detectors and charge integrators
  • Differential amplifier input stages
  • High-side switches
  • Peak detectors and level translators
  • Sample-and-hold
  • Current multipliers
  • Analog switches/multiplexers
  • Voltage comparators and level translators