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Taiwan Semiconductor TSM150NB04DCR RLG product image
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Taiwan Semiconductor TSM150NB04DCR RLGRoHS

Manufacturer
Taiwan SemiconductorAsian Brands
MPN
TSM150NB04DCR RLG
LCSC Part #
C3278470
Packaging
PDFN-8(5x6)
Customer #
Key Attributes
Dual N-Channel, Current:38A, Voltage:40V
Datasheetpdf iconTaiwan Semiconductor TSM150NB04DCR RLG
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.4352$ 0.44
200+$ 0.1684$ 33.68
500+$ 0.1625$ 81.25
1,000+$ 0.1596$ 159.60
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerTaiwan Semiconductor
PackagingPDFN-8(5x6)
Current - Continuous Drain(Id)38A
Pd - Power Dissipation40W
RDS(on)28.6mΩ@7V
Gate Threshold Voltage (Vgs(th))4V
Drain to Source Voltage40V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)51pF
Number2 N-Channel
Input Capacitance(Ciss)1.132nF
Gate Charge(Qg)18nC@10V
Operating Temperature-55℃~+150℃
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

500 W LDMOS packaged asymmetric Doherty power transistor for base station applications, operating frequency range 600 MHz to 960 MHz.

Features

AI Translation
  • Low on-resistance R<sub>DS(ON)</sub> to minimize conduction losses
  • Low gate charge for fast power switching
  • 100% tested for unclamped inductive switching (UIS) and gate resistance (Rg)
  • RoHS compliant
  • Halogen-free per IEC 61249-2-21

Applications

AI Translation
  • Brushless DC (BLDC) motor control
  • Battery power management
  • DC-DC converter
  • Secondary synchronous rectification