Images for reference only
EDA ModelsEasyEDA
onsemi FDMC86106LZ
| Manufacturer | |
| MPN | FDMC86106LZ |
| LCSC Part # | C3278421 |
| Packaging | MLP-8(3.3x3.3) |
| Customer # | |
| Key Attributes | 100V 2.2V 103mΩ@10V 1 N-channel MLP-8(3.3x3.3) Single FETs, MOSFETs RoHS |
| Datasheet |  onsemi FDMC86106LZ |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | MLP-8(3.3x3.3) | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 3.3A;7.5A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Pd - Power Dissipation | 2.3W;19W | |
| RDS(on) | 103mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 310pF | |
| Gate Charge(Qg) | 6nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel logic-level MOSFET is manufactured using the advanced PowerTrench process, which integrates shielded gate technology. This process is optimized for on-resistance while maintaining excellent switching performance. A G-S Zener diode is added to enhance the ESD voltage rating.
Features
AI Translation
- Shielded gate MOSFET technology
- Max rDS(on) = 103 mΩ at VGS = 10 V, ID = 3.3 A
- Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A
- Typical HBM ESD protection rating >3 KV
- 100% UI1L tested
- RoHS compliant
Applications
AI Translation
- DC-DC Conversion
Not available now
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | MLP-8(3.3x3.3) | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 3.3A;7.5A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Pd - Power Dissipation | 2.3W;19W | |
| RDS(on) | 103mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 310pF | |
| Gate Charge(Qg) | 6nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel logic-level MOSFET is manufactured using the advanced PowerTrench process, which integrates shielded gate technology. This process is optimized for on-resistance while maintaining excellent switching performance. A G-S Zener diode is added to enhance the ESD voltage rating.
Features
AI Translation
- Shielded gate MOSFET technology
- Max rDS(on) = 103 mΩ at VGS = 10 V, ID = 3.3 A
- Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A
- Typical HBM ESD protection rating >3 KV
- 100% UI1L tested
- RoHS compliant
Applications
AI Translation
- DC-DC Conversion
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |