onsemi FDMW2512NZ
| Manufacturer | |
| MPN | FDMW2512NZ |
| LCSC Part # | C3278415 |
| Packaging | MLP-6(2x5) |
| Customer # | |
| Key Attributes | Dual N-Channel MOSFET, Current: 7.2A, Voltage: 20V |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | MLP-6(2x5) | |
| Configuration | Common Drain | |
| Current - Continuous Drain(Id) | 7.2A | |
| Pd - Power Dissipation | 28W | |
| RDS(on) | 34mΩ@2.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Drain to Source Voltage | 20V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 127pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 740pF | |
| Gate Charge(Qg) | 13nC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 165pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | MLP-6(2x5) | |
| Configuration | Common Drain | |
| Current - Continuous Drain(Id) | 7.2A | |
| Pd - Power Dissipation | 28W | |
| RDS(on) | 34mΩ@2.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Type | Description | |
|---|---|---|
| Drain to Source Voltage | 20V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 127pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 740pF | |
| Gate Charge(Qg) | 13nC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 165pF |
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Introduction
AI Translation
This dual N-channel MOSFET is designed using Fairchild Semiconductor's advanced power trench process, optimized for R<sub>DS(ON)</sub> @ V<sub>GS</sub> = 2.5 V performance on a special MicroFET lead frame, with all drains located on the same side of the package.
Features
AI Translation
- 7.2 A, 20 V \quad RDS(ON) = 26 mΩ @ VGS = 4.5 V
- RDS(ON) = 34 mΩ @ VGS = 2.5 V
- ESD protection diode
- New 2 x 5 mm MicroFET package, low profile — 0.8 mm max
Applications
AI Translation
- Lithium-ion battery pack
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.2429 | $ 0.24 |
| 200+ | $ 0.094 | $ 18.80 |
| 500+ | $ 0.0907 | $ 45.35 |
| 1,000+ | $ 0.0891 | $ 89.10 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | MLP-6(2x5) | |
| Configuration | Common Drain | |
| Current - Continuous Drain(Id) | 7.2A | |
| Pd - Power Dissipation | 28W | |
| RDS(on) | 34mΩ@2.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Drain to Source Voltage | 20V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 127pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 740pF | |
| Gate Charge(Qg) | 13nC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 165pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | MLP-6(2x5) | |
| Configuration | Common Drain | |
| Current - Continuous Drain(Id) | 7.2A | |
| Pd - Power Dissipation | 28W | |
| RDS(on) | 34mΩ@2.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Type | Description | |
|---|---|---|
| Drain to Source Voltage | 20V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 127pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 740pF | |
| Gate Charge(Qg) | 13nC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 165pF |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This dual N-channel MOSFET is designed using Fairchild Semiconductor's advanced power trench process, optimized for R<sub>DS(ON)</sub> @ V<sub>GS</sub> = 2.5 V performance on a special MicroFET lead frame, with all drains located on the same side of the package.
Features
AI Translation
- 7.2 A, 20 V \quad RDS(ON) = 26 mΩ @ VGS = 4.5 V
- RDS(ON) = 34 mΩ @ VGS = 2.5 V
- ESD protection diode
- New 2 x 5 mm MicroFET package, low profile — 0.8 mm max
Applications
AI Translation
- Lithium-ion battery pack
C3278415 EasyEDA Library
Not drawn yet
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

