onsemi NDH8302P
| Manufacturer | |
| MPN | NDH8302P |
| LCSC Part # | C3278394 |
| Packaging | LSOP-8 |
| Customer # | |
| Key Attributes | Dual P-Channel, Current: -2A, Voltage: -20V |
| Datasheet |  onsemi NDH8302P |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | LSOP-8 | |
| Current - Continuous Drain(Id) | 10A | |
| Pd - Power Dissipation | 800mW | |
| RDS(on) | 190mΩ@2.7V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Drain to Source Voltage | 20V | |
| Type | P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 85pF | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | 515pF | |
| Gate Charge(Qg) | 11nC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 250pF |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
These P-channel enhancement-mode power MOSFETs are fabricated using Fairchild Semiconductor's proprietary high cell density DMOS technology. This ultra-high density process is specifically designed to minimize on-resistance. These devices are particularly suited for low-voltage applications such as notebook computer power management and other battery-powered circuits that require fast high-side switching and low on-state power loss in ultra-compact surface-mount packages.
Features
- R DS(ON) = 0.19Ω at VGS = -2.7V
- -2A, -20V. R DS(ON) = 0.13Ω at VGS = -4.5V
- Proprietary SuperSOT-8 package with copper lead frame for superior thermal and electrical performance
- High-density cell design for ultra-low R DS(ON)
- Excellent on-resistance and maximum DC current capability
Applications
- Point-of-load converter
- 1/16 brick synchronous rectifier
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.4527 | $ 0.45 |
| 200+ | $ 0.1752 | $ 35.04 |
| 500+ | $ 0.1691 | $ 84.55 |
| 1,000+ | $ 0.166 | $ 166.00 |
Standard Packaging3000/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | LSOP-8 | |
| Current - Continuous Drain(Id) | 10A | |
| Pd - Power Dissipation | 800mW | |
| RDS(on) | 190mΩ@2.7V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Drain to Source Voltage | 20V | |
| Type | P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 85pF | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | 515pF | |
| Gate Charge(Qg) | 11nC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 250pF |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
These P-channel enhancement-mode power MOSFETs are fabricated using Fairchild Semiconductor's proprietary high cell density DMOS technology. This ultra-high density process is specifically designed to minimize on-resistance. These devices are particularly suited for low-voltage applications such as notebook computer power management and other battery-powered circuits that require fast high-side switching and low on-state power loss in ultra-compact surface-mount packages.
Features
- R DS(ON) = 0.19Ω at VGS = -2.7V
- -2A, -20V. R DS(ON) = 0.13Ω at VGS = -4.5V
- Proprietary SuperSOT-8 package with copper lead frame for superior thermal and electrical performance
- High-density cell design for ultra-low R DS(ON)
- Excellent on-resistance and maximum DC current capability
Applications
- Point-of-load converter
- 1/16 brick synchronous rectifier
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |