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RENESAS NP29N06QDK-E1-AY product image
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RENESAS NP29N06QDK-E1-AYRoHS

Manufacturer
RENESAS
MPN
NP29N06QDK-E1-AY
LCSC Part #
C3278130
Packaging
HSON-8(5x5.4)
Customer #
Key Attributes
Dual N-channel, Current:30A, Voltage:60V
Datasheetpdf iconRENESAS NP29N06QDK-E1-AY
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1+$ 1.1064$ 1.11
200+$ 0.429$ 85.80
500+$ 0.4136$ 206.80
1,000+$ 0.4059$ 405.90
Standard Packaging2500/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerRENESAS
PackagingHSON-8(5x5.4)
Current - Continuous Drain(Id)30A
Pd - Power Dissipation44W
RDS(on)20mΩ@10V
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage60V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)90pF
Number2 N-Channel
Input Capacitance(Ciss)1.5nF
Gate Charge(Qg)24nC@10V
Operating Temperature-40℃~+175℃
Output Capacitance(Coss)170pF
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Introduction

AI Translation

NP29N06QDK is a dual N-channel MOSFET designed for high-current switching applications.

Features

AI Translation
  • Ultra-low on-resistance
  • R DS(on)1 max 20 mΩ (VGS = 10 V, ID = 15 A)
  • R DS(on)2 max 30 mΩ (VGS = 4.5 V, ID = 7.5 A)
  • Low input capacitance: typical Ciss = 1000 pF (VDS = 25 V)
  • Designed for automotive applications, AEC-Q101 compliant
  • Compact 8-pin dual HSON package

Applications

AI Translation
  • Automotive