AOS AON6435
| Manufacturer | |
| MPN | AON6435 |
| LCSC Part # | C3277793 |
| Packaging | DFN-8(5x6) |
| Customer # | |
| Key Attributes | MOSFET P-CH 30V 34A DFN-8(5x6) |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AOS | |
| Packaging | DFN-8(5x6) | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 240pF | |
| Current - Continuous Drain(Id) | 34A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 31W | |
| Reverse Transfer Capacitance (Crss@Vds) | 155pF | |
| RDS(on) | 17mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.4nF | |
| Gate Charge(Qg) | 21nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
AON6435 combines advanced trench MOSFET technology with a low-resistance package to achieve extremely low RDS(ON). This device is ideal for load switching and battery protection applications.
Features
AI Translation
- Split-gate trench MOSFET technology
- Low thermal resistance
- Moisture Sensitivity Level 1
- Halogen-free "Green" device
- Epoxy meets UL 94 V-0 flammability rating
- Lead-free finish/RoHS compliant (suffix "P" denotes RoHS compliant, see ordering information)
In-Stock: 1,610
1,610 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.3331 | $ 1.67 |
| 50+ | $ 0.2634 | $ 13.17 |
| 150+ | $ 0.2335 | $ 35.03 |
| 500+ | $ 0.1962 | $ 98.10 |
| 3,000+ | $ 0.1796 | $ 538.80 |
| 6,000+ | $ 0.1696 | $ 1017.60 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
$
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AOS | |
| Packaging | DFN-8(5x6) | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 240pF | |
| Current - Continuous Drain(Id) | 34A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 31W | |
| Reverse Transfer Capacitance (Crss@Vds) | 155pF | |
| RDS(on) | 17mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.4nF | |
| Gate Charge(Qg) | 21nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
AON6435 combines advanced trench MOSFET technology with a low-resistance package to achieve extremely low RDS(ON). This device is ideal for load switching and battery protection applications.
Features
AI Translation
- Split-gate trench MOSFET technology
- Low thermal resistance
- Moisture Sensitivity Level 1
- Halogen-free "Green" device
- Epoxy meets UL 94 V-0 flammability rating
- Lead-free finish/RoHS compliant (suffix "P" denotes RoHS compliant, see ordering information)
C3277793 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
