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AOS AON6284RoHS

Manufacturer
AOS
MPN
AON6284
LCSC Part #
C3277770
Packaging
DFN-8(5x6)
Customer #
Key Attributes
MOSFET N-CH 80V 170A DFN-8(5x6)
Datasheetpdf iconAOS AON6284
In-Stock: 524
524 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.0008$ 1.00
10+$ 0.8286$ 8.29
30+$ 0.7409$ 22.23
100+$ 0.6564$ 65.64
500+$ 0.6044$ 302.20
1,000+$ 0.5784$ 578.40
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerAOS
PackagingDFN-8(5x6)
Drain to Source Voltage80V
Output Capacitance(Coss)300pF
Current - Continuous Drain(Id)170A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.3V
Pd - Power Dissipation78W
Reverse Transfer Capacitance (Crss@Vds)16pF
RDS(on)7.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.162nF
Gate Charge(Qg)40nC@10V
TypeN-Channel
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Introduction

AI Translation

AON6284 utilizes trench MOSFET technology uniquely optimized for the highest efficiency high-frequency switching performance. The ultra-low RDS(ON), Ciss, and Coss minimize both conduction and switching power losses. This device is ideal for boost converters and synchronous rectifiers in consumer, telecom, industrial power, and LED backlighting applications.

Features

AI Translation
  • VDS(V) = -12 V
  • ID = -9 A (VGS = -4.5 V)
  • RDS(ON) < 20 mΩ (VGS = -4.5 V)
  • RDS(ON) < 25 mΩ (VGS = -2.5 V)
  • RDS(ON) < 31 mΩ (VGS = -1.8 V)
  • ESD protection