LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
TI RF1K4909396 product image
Images for reference only

TI RF1K4909396RoHS

Manufacturer
TI
MPN
RF1K4909396
LCSC Part #
C3276332
Packaging
-
Customer #
Key Attributes
2.5A 130mΩ@5V 2W 2V FET, MOSFET Arrays RoHS
Datasheetpdf iconTI RF1K4909396
Not available now
Minimum: 1Multiple: 1Sales Unit: Piece

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerTI
Packaging-
Current - Continuous Drain(Id)2.5A
RDS(on)130mΩ@5V
Pd - Power Dissipation2W
Gate Threshold Voltage (Vgs(th))2V
Drain to Source Voltage12V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)62.5pF
Input Capacitance(Ciss)775pF
Gate Charge(Qg)24nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)550pF
Report an ErrorShow similar products (0) >

Introduction

AI Translation

This dual P-channel power MOSFET is manufactured using the advanced MegaFET process. This process features geometry approaching that of LSI, enabling full utilization of silicon material to achieve excellent performance. It is suitable for applications such as switching regulators, switching converters, motor drivers, relay drivers, and low-voltage bus switches. The device is rated for full conduction at gate bias voltages of 3V–5V, enabling true on/off power control driven directly by logic-level (5V) ICs.

Features

AI Translation
  • 2.5A, 12V
  • rDS(ON) = 0.130 Ω
  • Temperature-compensated PSPICE model
  • On-resistance vs. gate drive voltage curve
  • Peak current vs. pulse width curve
  • Unclamped inductive switching (UIS) rating curve

Applications

AI Translation
  • Switching regulators
  • Switching converters
  • Motor drivers
  • Relay drivers
  • Low-voltage bus switches