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ST STP4NK60ZRoHS

Manufacturer
ST
MPN
STP4NK60Z
LCSC Part #
C32449
Packaging
TO-220
Customer #
Key Attributes
MOSFET N-CH 600V 4A TO-220
Datasheetpdf iconST STP4NK60Z
In-Stock: 66
66 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.7394$ 0.74
10+$ 0.6016$ 6.02
50+$ 0.5336$ 26.68
100+$ 0.4655$ 46.55
500+$ 0.4259$ 212.95
1,000+$ 0.4053$ 405.30
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-220
Drain to Source Voltage600V
Output Capacitance(Coss)67pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation70W
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)510pF
Gate Charge(Qg)26nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

Features

AI Translation
  • 100% avalanche tested
  • Very low intrinsic capacitances
  • Zener-protected

Applications

AI Translation
  • Switching applications