onsemi NTH4L032N065M3S
| Manufacturer | |
| MPN | NTH4L032N065M3S |
| LCSC Part # | C32257348 |
| Packaging | TO-247-4L |
| Customer # | |
| Key Attributes | 32 mohm, 650 V, M3S, TO247-4L N-CHANNEL MOSFET |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-247-4L | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 114pF | |
| Current - Continuous Drain(Id) | 50A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 187W | |
| RDS(on) | 44mΩ | |
| Reverse Transfer Capacitance (Crss@Vds) | 9.2pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.41nF | |
| Gate Charge(Qg) | 55nC | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Typical RDS(ON) = 32 mΩ @ VGS = 18 V
- Ultra-low gate charge (QG(tot) = 55 nC)
- Low capacitance high-speed switching (Coss = 114 pF)
- 100% avalanche tested
- Halogen-free device, compliant with RoHS Directive exemption 7a, lead-free second level interconnect
Applications
AI Translation
- SMPS
- Solar inverters
- UPS
- Energy storage
- EV charging infrastructure
In-Stock: 10
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 8.6436 | $ 8.64 |
| 10+ | $ 7.4874 | $ 74.87 |
| 30+ | $ 6.782 | $ 203.46 |
| 90+ | $ 6.1905 | $ 557.15 |
Standard Packaging30/Full Tube | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-247-4L | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 114pF | |
| Current - Continuous Drain(Id) | 50A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 187W | |
| RDS(on) | 44mΩ | |
| Reverse Transfer Capacitance (Crss@Vds) | 9.2pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.41nF | |
| Gate Charge(Qg) | 55nC | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Typical RDS(ON) = 32 mΩ @ VGS = 18 V
- Ultra-low gate charge (QG(tot) = 55 nC)
- Low capacitance high-speed switching (Coss = 114 pF)
- 100% avalanche tested
- Halogen-free device, compliant with RoHS Directive exemption 7a, lead-free second level interconnect
Applications
AI Translation
- SMPS
- Solar inverters
- UPS
- Energy storage
- EV charging infrastructure
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC |
| Type | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |

