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Infineon BFR949L3E6327 product image
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Infineon BFR949L3E6327RoHS

Manufacturer
Infineon
MPN
BFR949L3E6327
LCSC Part #
C3199307
Packaging
TSLP-3-1
Customer #
Key Attributes
10V 100 250mW 50mA NPN TSLP-3-1 Bipolar RF Transistors RoHS
Datasheetpdf iconInfineon BFR949L3E6327

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar RF Transistors
ManufacturerInfineon
PackagingTSLP-3-1
Collector - Emitter Voltage VCEO10V
DC Current Gain100
Pd - Power Dissipation250mW
Current - Collector(Ic)50mA
Operating Temperature-
Transition frequency(fT)9GHz
typeNPN
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging15000
Sales UnitPiece

Introduction

AI Translation

Suitable for low-noise, high-gain broadband amplifiers with collector currents from 1 mA to 20 mA. Transition frequency fT is 9 GHz, with a noise figure F of 1 dB at 1 GHz. Available in lead-free (RoHS-compliant) packaging. Compliant with AEC Q101. This device is electrostatic discharge (ESD) sensitive — handle with appropriate precautions!

Features

AI Translation
  • Low-noise, high-gain broadband amplifier for collector currents from 1 mA to 20 mA
  • Transition frequency fT of 9 GHz, noise figure F of 1 dB at 1 GHz
  • Lead-free (RoHS-compliant) package
  • AEC Q101 compliant
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.2378$ 0.24
200+$ 0.0921$ 18.42
500+$ 0.0888$ 44.40
1,000+$ 0.0872$ 87.20
Standard Packaging15000/Full Reel
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