Infineon BFP640E6327
| Manufacturer | |
| MPN | BFP640E6327 |
| LCSC Part # | C3199241 |
| Packaging | SOT-343-4 |
| Customer # | |
| Key Attributes | 4.5V 110 200mW 50mA NPN SOT-343-4 Bipolar RF Transistors RoHS |
| Datasheet |  Infineon BFP640E6327 |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar RF Transistors | |
| Manufacturer | Infineon | |
| Packaging | SOT-343-4 | |
| Collector - Emitter Voltage VCEO | 4.5V | |
| DC Current Gain | 110 | |
| Pd - Power Dissipation | 200mW | |
| Current - Collector(Ic) | 50mA | |
| Operating Temperature | - | |
| Transition frequency(fT) | 40GHz | |
| type | NPN |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This is an NPN SiGe RF transistor featuring high gain and low noise, delivering excellent performance for a wide range of wireless applications, including CDMA and WLAN. Noise figure F = 0.65 dB at 1.8 GHz, F = 1.2 dB at 6 GHz, and maximum stable gain Gms = 24 dB at 1.8 GHz. Manufactured with gold metallization for enhanced reliability, utilizing 70 GHz fT SiGe technology, lead-free packaging (RoHS compliant), and AEC Q101 qualified.
Features
- Excellent performance for a wide range of wireless applications
- Suitable for CDMA and WLAN applications
- Outstanding noise figure F = 0.65 dB at 1.8 GHz
- Outstanding noise figure F = 1.2 dB at 6 GHz
- High maximum stable gain Gms = 24 dB at 1.8 GHz
- Gold metallization process with extremely high reliability
- 70 GHz fT SiGe technology
- Lead-free (RoHS compliant) package
- AEC Q101 qualified
Applications
- CDMA applications
- WLAN applications
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.9258 | $ 0.93 |
| 200+ | $ 0.358 | $ 71.60 |
| 500+ | $ 0.3457 | $ 172.85 |
| 1,000+ | $ 0.3395 | $ 339.50 |
Standard Packaging3000/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar RF Transistors | |
| Manufacturer | Infineon | |
| Packaging | SOT-343-4 | |
| Collector - Emitter Voltage VCEO | 4.5V | |
| DC Current Gain | 110 | |
| Pd - Power Dissipation | 200mW | |
| Current - Collector(Ic) | 50mA | |
| Operating Temperature | - | |
| Transition frequency(fT) | 40GHz | |
| type | NPN |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This is an NPN SiGe RF transistor featuring high gain and low noise, delivering excellent performance for a wide range of wireless applications, including CDMA and WLAN. Noise figure F = 0.65 dB at 1.8 GHz, F = 1.2 dB at 6 GHz, and maximum stable gain Gms = 24 dB at 1.8 GHz. Manufactured with gold metallization for enhanced reliability, utilizing 70 GHz fT SiGe technology, lead-free packaging (RoHS compliant), and AEC Q101 qualified.
Features
- Excellent performance for a wide range of wireless applications
- Suitable for CDMA and WLAN applications
- Outstanding noise figure F = 0.65 dB at 1.8 GHz
- Outstanding noise figure F = 1.2 dB at 6 GHz
- High maximum stable gain Gms = 24 dB at 1.8 GHz
- Gold metallization process with extremely high reliability
- 70 GHz fT SiGe technology
- Lead-free (RoHS compliant) package
- AEC Q101 qualified
Applications
- CDMA applications
- WLAN applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |