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Infineon FF200R12KT3E product image
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Infineon FF200R12KT3ERoHS

Manufacturer
Infineon
MPN
FF200R12KT3E
LCSC Part #
C3198675
Packaging
-
Customer #
Key Attributes
1.05kW 1.2kV IGBT Modules RoHS
Datasheetpdf iconInfineon FF200R12KT3E

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/IGBT Modules
ManufacturerInfineon
Packaging-
Pd - Power Dissipation1.05kW
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance(Cies)14nF@25V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.15V@15V,200A
Operating Temperature-40℃~+125℃
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging10
Sales UnitPiece
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QtyUnit Price(Reference Only)Total Amount
1+$ 253.8859$ 253.89
200+$ 98.2504$ 19650.08
500+$ 94.7985$ 47399.25
1,000+$ 93.0926$ 93092.60
Standard Packaging10/Full Bag
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