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onsemi NXH350N100H4Q2F2S1G product image
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onsemi NXH350N100H4Q2F2S1GRoHS

Manufacturer
onsemi
MPN
NXH350N100H4Q2F2S1G
LCSC Part #
C3198345
Packaging
Q2PACK-42(47x93)
Customer #
Key Attributes
SiC Hybrid Module, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode
Datasheetpdf icononsemi NXH350N100H4Q2F2S1G

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/IGBT Modules
Manufactureronsemi
PackagingQ2PACK-42(47x93)
Pd - Power Dissipation276W
Current - Collector(Ic)303A
Collector-Emitter Breakdown Voltage (Vces)1kV
Input Capacitance(Cies)24.146nF@20V
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Operating Temperature-40℃~+150℃@(Tj)
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging36
Sales UnitPiece
Out of Stock
Stock Notification
Add to BOM List
QtyUnit Price(Reference Only)Total Amount
1+$ 383.6182$ 383.62
216+$ 148.4549$ 32066.26
504+$ 143.2388$ 72192.36
1,008+$ 140.66$ 141785.28
Standard Packaging36/Full Tray
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