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MACOM MRF10150RoHS

Manufacturer
MPN
MRF10150
LCSC Part #
C3198308
Packaging
-
Customer #
Key Attributes
65V 20 14A NPN Bipolar RF Transistors RoHS
Datasheetpdf iconMACOM MRF10150

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar RF Transistors
ManufacturerMACOM
Packaging-
Collector - Emitter Voltage VCEO65V
DC Current Gain20
Pd - Power Dissipation-
Operating Temperature-
Current - Collector(Ic)14A
Transition frequency(fT)-
typeNPN

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging20
Sales UnitPiece

Introduction

AI Translation

This transistor is designed for 1025–1150 MHz pulsed common-base amplifier applications such as TCAS, TACAN, and Mode S transmitters. Guaranteed performance at 1090 MHz is as follows: output power of 150 W (peak), minimum peak gain of 9.5 dB with a typical value of 10.0 dB; 100% load mismatch tested at VSWR 10:1 under all phase angles; hermetic package; silicon nitride passivation; gold metallization and ballasted emitter design for extended service life and resistance to metal migration; internally integrated input and output matching circuits; characterized with 10 μs pulses at 10% duty cycle; recommended driver for a pair of MRF10500 transistors.

Features

AI Translation
  • Emitter gold metallization and ballasting for long lifetime and resistance to metal migration
  • Integrated input and output matching circuits
  • Characterized with 10 μs pulses at 10% duty cycle

Applications

AI Translation

TCAS, TACAN, and Mode S transmitter common-base pulse amplifier applications in the 1025–1150 MHz range

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QtyUnit Price(Reference Only)Total Amount
1+$ 433.5803$ 433.58
200+$ 167.7902$ 33558.04
500+$ 161.8932$ 80946.60
1,000+$ 158.9802$ 158980.20
Standard Packaging20/Full Tray
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