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MACOM MRF1004MB product image
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MACOM MRF1004MBRoHS

Manufacturer
MACOM
MPN
MRF1004MB
LCSC Part #
C3198303
Packaging
-
Customer #
Key Attributes
20V 10 4W 250mA NPN Bipolar RF Transistors RoHS
Datasheetpdf iconMACOM MRF1004MB

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar RF Transistors
ManufacturerMACOM
Packaging-
Collector - Emitter Voltage VCEO20V
DC Current Gain10
Pd - Power Dissipation4W
Operating Temperature-
Current - Collector(Ic)250mA
Transition frequency(fT)-
typeNPN
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging10
Sales UnitPiece

Introduction

AI Translation

This microwave pulsed power silicon NPN transistor is designed for Class B and Class C common-base amplifier applications in short-pulse and long-pulse TACAN, IFF, DME, and radar transmitters. Performance is guaranteed at 1090 MHz with 35 V DC, delivering 4.0 W peak output power, minimum gain of 10 dB, 100% load mismatch tested at 10:1 VSWR at all phase angles, housed in an industry-standard package with nitride passivation.

Features

AI Translation
  • Gold metallization process, ballasted emitter design, long service life, strong resistance to metal migration
  • Internal input matching for wideband operation
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QtyUnit Price(Reference Only)Total Amount
1+$ 140.2699$ 140.27
200+$ 54.2832$ 10856.64
500+$ 52.3754$ 26187.70
1,000+$ 51.4333$ 51433.30
Standard Packaging10/Full Tray
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