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Infineon BFR949TE6327 product image
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Infineon BFR949TE6327RoHS

Manufacturer
Infineon
MPN
BFR949TE6327
LCSC Part #
C3197052
Packaging
SC-75
Customer #
Key Attributes
10V 100 250mW 50mA NPN SC-75 Bipolar RF Transistors RoHS
Datasheetpdf iconInfineon BFR949TE6327

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar RF Transistors
ManufacturerInfineon
PackagingSC-75
Current - Collector Cutoff100nA
Emitter-Base Voltage(Vebo)1.5V
Collector - Emitter Voltage VCEO10V
DC Current Gain100
Pd - Power Dissipation250mW
Operating Temperature-65℃~+150℃
Current - Collector(Ic)50mA
Transition frequency(fT)9GHz
typeNPN
Number1 NPN
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

Suitable for low-noise, high-gain wideband amplifiers with collector currents from 1 mA to 20 mA; transition frequency ft = 9 GHz, noise figure F = 1 dB at 1 GHz; lead-free (RoHS compliant) package; AEC Q101 compliant.

Features

AI Translation
  • Low-noise, high-gain broadband amplifier for collector currents of 1 mA to 20 mA
  • Transition frequency ft = 9 GHz, noise figure F = 1 dB at 1 GHz
  • Lead-free (RoHS compliant) package
  • AEC Q101 compliant
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