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NXP PHPT61002PYC115 product image
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NXP PHPT61002PYC115RoHS

Manufacturer
NXP
MPN
PHPT61002PYC115
LCSC Part #
C3195627
Packaging
-
Customer #
Key Attributes
100V 2A PNP 1 PNP Single Bipolar Transistors RoHS
Datasheetpdf iconNXP PHPT61002PYC115
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QtyUnit Price(Reference Only)Total Amount
1+$ 2.6432$ 2.64
200+$ 1.023$ 204.60
500+$ 0.9876$ 493.80
1,500+$ 0.969$ 1453.50
Standard Packaging1500/Full Bag
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
ManufacturerNXP
Packaging-
Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO8V
Pd - Power Dissipation25W
Current - Collector(Ic)2A
typePNP
Number1 PNP
Operating Temperature-55℃~+175℃
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging1500
Sales UnitPiece

Introduction

AI Translation

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61002NYC.

Features

AI Translation
  • High thermal power dissipation capability
  • Suitable for high temperature applications up to 175 °C
  • Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
  • High energy efficiency due to less heat generation

Applications

AI Translation
  • Power management
  • Load switch
  • Linear mode voltage regulator
  • Backlighting applications