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ST STGWA100H65DFB2
| Manufacturer | |
| MPN | STGWA100H65DFB2 |
| LCSC Part # | C3193679 |
| Packaging | TO-247 |
| Customer # | |
| Key Attributes | IGBT 650V 145A TO-247 |
| Datasheet |  ST STGWA100H65DFB2 |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | ST | |
| Packaging | TO-247 | |
| Td(off) | 130ns | |
| Pd - Power Dissipation | 441W | |
| Td(on) | 30ns | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Current - Collector(Ic) | 145A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 165pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@1mA | |
| Vce Saturation(VCE(sat)) | 2V@100A,15V | |
| Reverse Recovery Time(trr) | 123ns | |
| Switching Energy(Eoff) | 1.4mJ | |
| Turn-On Energy (Eon) | 2.2mJ | |
| Input Capacitance(Cies) | 6.227nF | |
| Output Capacitance(Coes) | 318pF | |
| Gate Charge(Qg) | 288nC |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
Applications
- Welding
- Power factor correction
- UPS
- Solar inverters
- Chargers
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 5.2163 | $ 5.22 |
| 10+ | $ 4.9803 | $ 49.80 |
| 30+ | $ 4.8371 | $ 145.11 |
| 100+ | $ 4.7183 | $ 471.83 |
Standard Packaging30/Full Tube | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | ST | |
| Packaging | TO-247 | |
| Td(off) | 130ns | |
| Pd - Power Dissipation | 441W | |
| Td(on) | 30ns | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Current - Collector(Ic) | 145A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 165pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@1mA | |
| Vce Saturation(VCE(sat)) | 2V@100A,15V | |
| Reverse Recovery Time(trr) | 123ns | |
| Switching Energy(Eoff) | 1.4mJ | |
| Turn-On Energy (Eon) | 2.2mJ | |
| Input Capacitance(Cies) | 6.227nF | |
| Output Capacitance(Coes) | 318pF | |
| Gate Charge(Qg) | 288nC |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
Applications
- Welding
- Power factor correction
- UPS
- Solar inverters
- Chargers
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |