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Infineon FS75R12KT4B15 product image
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Infineon FS75R12KT4B15RoHS

Manufacturer
Infineon
MPN
FS75R12KT4B15
LCSC Part #
C3190295
Packaging
Through Hole,107.5x45mm
Customer #
Key Attributes
IGBT 1.2kV 75A TH
Datasheetpdf iconInfineon FS75R12KT4B15

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/IGBT Modules
ManufacturerInfineon
PackagingThrough Hole,107.5x45mm
Td(off)300ns
Pd - Power Dissipation385W
Td(on)130ns
Current - Collector(Ic)75A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance(Cies)4.3nF@25V
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.2V@2.4mA
Operating Temperature-40℃~+150℃
Vce Saturation(VCE(sat))2.25V@75A,15V
Switching Energy(Eoff)3.9mJ
Turn-On Energy (Eon)4.7mJ
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging15
Sales UnitPiece

Features

AI Translation
  • Low VCEsat - Trench IGBT 4
  • TVjop = 150℃
  • VCEsat with positive Temperature Coefficient
  • Al2O3 Substrate with Low Thermal Resistance
  • High Power and Thermal Cycling Capability
  • Integrated NTC temperature sensor
  • Copper Base Plate
  • Standard Housing

Applications

AI Translation
  • Auxiliary inverters
  • Motor Drives
  • Servo Drives
In-Stock: 10
10 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 63.8122$ 63.81
30+$ 61.5732$ 1847.20
Standard Packaging15/Full Tray
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