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Infineon FS50R12KT4B15 product image
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Infineon FS50R12KT4B15RoHS

Manufacturer
MPN
FS50R12KT4B15
LCSC Part #
C3190268
Packaging
Through Hole,107.5x45mm
Customer #
Key Attributes
IGBT 1.2kV 50A TH
Datasheetpdf iconInfineon FS50R12KT4B15

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/IGBT Modules
ManufacturerInfineon
PackagingThrough Hole,107.5x45mm
Td(off)300ns
Pd - Power Dissipation280W
Td(on)130ns
Current - Collector(Ic)50A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)100pF
Input Capacitance(Cies)2.8nF@25V
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.15V@15V,50A
Gate Charge(Qg)380nC
Operating Temperature-40℃~+150℃@(Tj)
Switching Energy(Eoff)2.5mJ
Turn-On Energy (Eon)3.6mJ

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging15
Sales UnitPiece

Features

AI Translation
  • Low VCEsat
  • Trench IGBT 4
  • Tvio p = 150℃
  • VcEsat with positive Temperature Coefficient
  • Al₂O₃ Substrate with Low Thermal Resistance
  • High Power and Thermal Cycling Capability
  • Integrated NTC temperature sensor
  • Copper Base Plate
  • Standard Housing

Applications

AI Translation
  • Auxiliary Inverters
  • Motor Drives
  • Servo Drives
In-Stock: 15
15 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 60.3798$ 60.38
30+$ 58.2425$ 1747.28
Standard Packaging15/Full Tray
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