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GOFORD G2312 product image
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GOFORD G2312RoHS

Manufacturer
GOFORDAsian Brands
MPN
G2312
LCSC Part #
C3151761
Packaging
SOT-23
Customer #
Key Attributes
MOSFET N-CH 20V 5A SOT-23
Datasheetpdf iconGOFORD G2312
In-Stock: 110
110 In stock, ships now
Not recommended for new designs
Once stock is depleted, this item will be marked as "Out of Stock."
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QtyUnit PriceTotal Amount
10+$ 0.0477$ 0.48
100+$ 0.0385$ 3.85
300+$ 0.0339$ 10.17
3,000+$ 0.029$ 87.00
6,000+$ 0.0262$ 157.20
9,000+$ 0.0248$ 223.20
Standard Packaging3000/Full Reel

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerGOFORD
PackagingSOT-23
Drain to Source Voltage20V
Output Capacitance(Coss)132pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)119pF
RDS(on)13mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)830pF
Gate Charge(Qg)10.5nC
Vgs±12V
TypeN-Channel
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Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

G2312 utilizes advanced trench technology to deliver excellent on-resistance RDS(ON) and low gate charge, suitable for a wide range of applications.

Features

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  • Drain-Source Voltage VDS: 20V
  • Drain Current ID (VGS = 10V): 5A
  • On-Resistance RDS(ON) (VGS = 10V): < 18 mΩ
  • On-Resistance RDS(ON) (VGS = 4.5V): < 20 mΩ
  • 100% Avalanche Tested
  • RoHS Compliant

Applications

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  • Power switch
  • DC-DC converter