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ST STGB19NC60KDT4 product image
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ST STGB19NC60KDT4RoHS

Manufacturer
ST
MPN
STGB19NC60KDT4
LCSC Part #
C314017
Packaging
D2PAK
Customer #
Key Attributes
IGBT 600V 35A D2PAK
Datasheetpdf iconST STGB19NC60KDT4

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/Single IGBTs
ManufacturerST
PackagingD2PAK
Td(off)105ns
Pd - Power Dissipation125W
Td(on)30ns
Operating Temperature-55℃~+150℃@(Tj)
Current - Collector(Ic)35A
Collector-Emitter Breakdown Voltage (Vces)600V
Reverse Transfer Capacitance (Cres)28pF
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.75V@15V,12A
Vce Saturation(VCE(sat))2.75V@12A,15V
Reverse Recovery Time(trr)31ns
Switching Energy(Eoff)255uJ
Turn-On Energy (Eon)165uJ
Input Capacitance(Cies)1.17nF
Output Capacitance(Coes)127pF
Gate Charge(Qg)55nC
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging1000
Sales UnitPiece

Introduction

AI Translation

These devices are very fast IGBTs developed using advanced PowerMESH technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior.

Features

AI Translation
  • Low on voltage drop (VCE(sat))
  • Low CRES / CIES ratio (no cross-conduction susceptibility)
  • Short-circuit withstand time 10 μs
  • IGBT co-packaged with ultrafast free wheeling diode

Applications

AI Translation
  • High frequency inverters
  • Motor drives
In-Stock: 2,986
2,986 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.7244$ 0.72
10+$ 0.6123$ 6.12
30+$ 0.5571$ 16.71
100+$ 0.5003$ 50.03
500+$ 0.4678$ 233.90
1,000+$ 0.4499$ 449.90
Standard Packaging1000/Full Reel
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