Infineon/CYPRESS FM24CL16B-GTR

The FM24CL16B is a 16-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories.

Unlike EEPROM, the FM24CL16B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. Also, F-RAM exhibits much lower power during writes than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits. The FM24CL16B is capable of supporting 10^14 read/write cycles, or 100 million times more write cycles than EEPROM.

These capabilities make the FM24CL16B ideal for nonvolatile memory applications, requiring frequent or rapid writes. Examples range from data logging, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system.

The FM24CL16B provides substantial benefits to users of serial (I²C) EEPROM as a hardware drop-in replacement. The device specifications are guaranteed over an industrial temperature range of -40℃ to +85℃.

The FM24CL16B is a serial F-RAM memory. The memory array is logically organized as 2,048x8 bits and is accessed using an industry-standard I²C interface. The functional operation of the F-RAM is similar to serial (I²C) EEPROM. The major difference between the FM24CL16B and a serial (I²C) EEPROM with the same pinout is the F-RAM's superior write performance, high endurance, and low power consumption.

When accessing the FM24CL16B, the user addresses 2K locations of eight data bits each. These eight data bits are shifted in or out serially. The addresses are accessed using the I²C protocol, which includes a slave address (to distinguish other non-memory devices), a row address, and a segment address. The row address consists of 8-bits that specify one of the 256 rows. The 3-bit segment address specifies one of the 8 segments within each row. The complete address of 11-bits specifies each byte address uniquely.

The access time for the memory operation is essentially zero, beyond the time needed for the serial protocol. That is, the memory is read or written at the speed of the I²C bus. Unlike a serial (I²C) EEPROM, it is not necessary to poll the device for a ready condition because writes occur at bus speed. By the time a new bus transaction can be shifted into the device, a write operation is complete.

• 16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2 Kx8
• High-endurance 100 trillion (10^14) read/writes
• 151-year data retention
• NoDelay™ writes
• Advanced high-reliability ferroelectric process
• Fast 2-wire Serial interface (I²C)
• Up to 1-MHz frequency
• Direct hardware replacement for serial (I²C) EEPROM
• Supports legacy timings for 100 kHz and 400 kHz
• Low power consumption
• 100 μA active current at 100 kHz
• 3 μA (typ) standby current
• Voltage operation: VDD = 2.7 V to 3.65 V
• Industrial temperature: -40 ℃ to +85 ℃
• 8-pin small outline integrated circuit (SOIC) package
• 8-pin thin dual flat no leads (TDFN) package
• Restriction of hazardous substances (RoHS) compliant

• nonvolatile memory applications requiring frequent or rapid writes
• data logging
• industrial controls