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VISHAY SQ2319CES-T1-GE3RoHS

Manufacturer
MPN
SQ2319CES-T1-GE3
LCSC Part #
C30884362
Packaging
SOT-23-3
Customer #
Key Attributes
3W 40V 4.6A 2V 68mΩ@10V 1 P-Channel P-Channel SOT-23-3 Single FETs, MOSFETs RoHS
Datasheetpdf iconVISHAY SQ2319CES-T1-GE3
In-Stock: 2,904
2,904 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.4843$ 0.4747$ 0.47
10+$ 0.3819$ 0.3743$ 3.74
30+$ 0.3364$ 0.3297$ 9.89
100+$ 0.2828$ 0.2772$ 27.72
500+$ 0.2568$ 0.2517$ 125.85
1,000+$ 0.2422$ 0.2374$ 237.40
Standard Packaging3000/Full Bag
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVISHAY
PackagingSOT-23-3
Output Capacitance(Coss)89pF
Pd - Power Dissipation3W
ConfigurationStandalone
Drain to Source Voltage40V
Current - Continuous Drain(Id)4.6A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
RDS(on)68mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)54pF
Number1 P-Channel
Input Capacitance(Ciss)491pF
Gate Charge(Qg)11nC
Vgs±20V
TypeP-Channel

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Features

AI Translation
  • TrenchFET Power MOSFET
  • AEC-Q101 Qualified
  • 100% Tested for Gate Resistance (Rg) and Unclamped Inductive Switching (UIS)