ROHM 2SD2114KT146V
| Manufacturer | |
| MPN | 2SD2114KT146V |
| LCSC Part # | C308659 |
| Packaging | TO-236-3(SOT-23-3) |
| Customer # | |
| Key Attributes | TRANS NPN 20V 0.5A TO-236-3(SOT-23-3) |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | ROHM | |
| Packaging | TO-236-3(SOT-23-3) | |
| Current - Collector Cutoff | 500nA | |
| Transition frequency(fT) | 350MHz | |
| Collector - Emitter Voltage VCEO | 20V | |
| Emitter-Base Voltage VEBO | 12V | |
| DC Current Gain | 820 | |
| Current - Collector(Ic) | 500mA | |
| Pd - Power Dissipation | 200mW | |
| Number | 1 NPN | |
| type | NPN | |
| Operating Temperature | -55℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 400mV |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | ROHM | |
| Packaging | TO-236-3(SOT-23-3) | |
| Current - Collector Cutoff | 500nA | |
| Transition frequency(fT) | 350MHz | |
| Collector - Emitter Voltage VCEO | 20V | |
| Emitter-Base Voltage VEBO | 12V |
| Type | Description | |
|---|---|---|
| DC Current Gain | 820 | |
| Current - Collector(Ic) | 500mA | |
| Pd - Power Dissipation | 200mW | |
| Number | 1 NPN | |
| type | NPN | |
| Operating Temperature | -55℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 400mV |
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Features
AI Translation
- High DC current gain. hFE = 1200 (Typ.)
- High emitter-base voltage. VEBO = 12V (Min.)
- Low VCE (sat). VCE :(sat)=0.18V (Typ.) (lc / IB = 500mA/20mA)
- Structure Epitaxial planar type NPN silicon transistor
In-Stock: 1,230
1,230 In stock, ships now
Minimum: 10Multiple: 10Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0498 | $ 0.50 |
| 100+ | $ 0.049 | $ 4.90 |
| 300+ | $ 0.0484 | $ 14.52 |
| 1,000+ | $ 0.0479 | $ 47.90 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | ROHM | |
| Packaging | TO-236-3(SOT-23-3) | |
| Current - Collector Cutoff | 500nA | |
| Transition frequency(fT) | 350MHz | |
| Collector - Emitter Voltage VCEO | 20V | |
| Emitter-Base Voltage VEBO | 12V | |
| DC Current Gain | 820 | |
| Current - Collector(Ic) | 500mA | |
| Pd - Power Dissipation | 200mW | |
| Number | 1 NPN | |
| type | NPN | |
| Operating Temperature | -55℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 400mV |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | ROHM | |
| Packaging | TO-236-3(SOT-23-3) | |
| Current - Collector Cutoff | 500nA | |
| Transition frequency(fT) | 350MHz | |
| Collector - Emitter Voltage VCEO | 20V | |
| Emitter-Base Voltage VEBO | 12V |
| Type | Description | |
|---|---|---|
| DC Current Gain | 820 | |
| Current - Collector(Ic) | 500mA | |
| Pd - Power Dissipation | 200mW | |
| Number | 1 NPN | |
| type | NPN | |
| Operating Temperature | -55℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 400mV |
Report an ErrorShow similar products (0) >
Features
AI Translation
- High DC current gain. hFE = 1200 (Typ.)
- High emitter-base voltage. VEBO = 12V (Min.)
- Low VCE (sat). VCE :(sat)=0.18V (Typ.) (lc / IB = 500mA/20mA)
- Structure Epitaxial planar type NPN silicon transistor
C308659 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
