Leiditech DMG2307LQ
| Manufacturer | LeiditechAsian Brands |
| MPN | DMG2307LQ |
| LCSC Part # | C3040116 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET 30V 4.1A SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Leiditech | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 98pF | |
| Current - Continuous Drain(Id) | 4.1A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V | |
| Pd - Power Dissipation | 1.5W | |
| RDS(on) | 60mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 74pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 580pF | |
| Gate Charge(Qg) | 6.8nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
- Trench Power LV MOSFET technology
- High density cell design for Low RDS(ON)
- High Speed switching
Features
AI Translation
- Advanced high cell density trench technology
- Low RDS(ON) for minimized conduction losses
- Low gate charge for fast switching
- Low thermal resistance
Applications
AI Translation
- Battery protection
- Load switch
- Power management
In-Stock: 45
45 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1365 | $ 0.68 |
| 50+ | $ 0.1087 | $ 5.44 |
| 150+ | $ 0.0948 | $ 14.22 |
| 500+ | $ 0.0844 | $ 42.20 |
| 3,000+ | $ 0.0761 | $ 228.30 |
| 6,000+ | $ 0.0719 | $ 431.40 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Leiditech | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 98pF | |
| Current - Continuous Drain(Id) | 4.1A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V | |
| Pd - Power Dissipation | 1.5W | |
| RDS(on) | 60mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 74pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 580pF | |
| Gate Charge(Qg) | 6.8nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
- Trench Power LV MOSFET technology
- High density cell design for Low RDS(ON)
- High Speed switching
Features
AI Translation
- Advanced high cell density trench technology
- Low RDS(ON) for minimized conduction losses
- Low gate charge for fast switching
- Low thermal resistance
Applications
AI Translation
- Battery protection
- Load switch
- Power management
C3040116 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



