GOFORD G20N06D52
| Manufacturer | GOFORDAsian Brands |
| MPN | G20N06D52 |
| LCSC Part # | C3038570 |
| Packaging | DFN5x6-8L |
| Customer # | |
| Key Attributes | MOSFET N-CH ARR 60V 20A DFN5x6-8L |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | GOFORD | |
| Packaging | DFN5x6-8L | |
| Current - Continuous Drain(Id) | 20A | |
| Pd - Power Dissipation | 48W | |
| RDS(on) | 26mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Drain to Source Voltage | 60V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 51pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 1.326nF | |
| Gate Charge(Qg) | 25nC | |
| Vgs | ±20V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 55pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | GOFORD | |
| Packaging | DFN5x6-8L | |
| Current - Continuous Drain(Id) | 20A | |
| Pd - Power Dissipation | 48W | |
| RDS(on) | 26mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Drain to Source Voltage | 60V |
| Type | Description | |
|---|---|---|
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 51pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 1.326nF | |
| Gate Charge(Qg) | 25nC | |
| Vgs | ±20V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 55pF |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The G20N06D52 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Features
AI Translation
- High density cell design for ultra low Rdson
- Fully characterized Avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- RoHS Compliant
Applications
AI Translation
- Power switching application
- Hard Switched and High Frequency Circuits
- Uninterruptible Power Supply
In-Stock: 270
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Minimum: 5Multiple: 5Sales Unit: Piece
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.3552 | $ 1.78 |
| 50+ | $ 0.2814 | $ 14.07 |
| 150+ | $ 0.2497 | $ 37.46 |
| 500+ | $ 0.2102 | $ 105.10 |
| 2,500+ | $ 0.1927 | $ 481.75 |
| 5,000+ | $ 0.1821 | $ 910.50 |
Standard Packaging5000/Full Reel | ||
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | GOFORD | |
| Packaging | DFN5x6-8L | |
| Current - Continuous Drain(Id) | 20A | |
| Pd - Power Dissipation | 48W | |
| RDS(on) | 26mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Drain to Source Voltage | 60V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 51pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 1.326nF | |
| Gate Charge(Qg) | 25nC | |
| Vgs | ±20V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 55pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | GOFORD | |
| Packaging | DFN5x6-8L | |
| Current - Continuous Drain(Id) | 20A | |
| Pd - Power Dissipation | 48W | |
| RDS(on) | 26mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Drain to Source Voltage | 60V |
| Type | Description | |
|---|---|---|
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 51pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 1.326nF | |
| Gate Charge(Qg) | 25nC | |
| Vgs | ±20V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 55pF |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The G20N06D52 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Features
AI Translation
- High density cell design for ultra low Rdson
- Fully characterized Avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- RoHS Compliant
Applications
AI Translation
- Power switching application
- Hard Switched and High Frequency Circuits
- Uninterruptible Power Supply
C3038570 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



