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GOFORD G60N04D52 product image
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GOFORD G60N04D52RoHS

Manufacturer
GOFORDAsian Brands
MPN
G60N04D52
LCSC Part #
C3038567
Packaging
DFN-8(5x6)
Customer #
Key Attributes
MOSFET N-CH ARR 30V 35A DFN-8(5x6)
Datasheetpdf iconGOFORD G60N04D52
In-Stock: 200
200 In stock, ships now
Not recommended for new designs
Once stock is depleted, this item will be marked as "Out of Stock."
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Minimum: 5Multiple: 5Sales Unit: Piece
QtyUnit PriceTotal Amount
5+$ 0.2524$ 1.26
50+$ 0.1969$ 9.85
150+$ 0.1731$ 25.97
500+$ 0.1368$ 68.40
2,500+$ 0.1236$ 309.00
5,000+$ 0.1157$ 578.50
Standard Packaging5000/Full Reel

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerGOFORD
PackagingDFN-8(5x6)
Current - Continuous Drain(Id)60A
Pd - Power Dissipation65W
RDS(on)7.2mΩ@10V
Gate Threshold Voltage (Vgs(th))1.7V
Drain to Source Voltage40V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)153pF
Number2 N-Channel
Input Capacitance(Ciss)2.35nF
Gate Charge(Qg)42nC
Vgs±20V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)170pF
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Introduction

AI Translation

G60N04D52 adopts advanced trench technology, delivering excellent on-resistance RDS(ON) and low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • Drain-Source Voltage V<sub>DS</sub>: 40V
  • Drain Current I<sub>D</sub> (V<sub>GS</sub> = 10V): 35A
  • On-Resistance R<sub>DS(ON)</sub> (V<sub>GS</sub> = 10V): < 9 mΩ
  • On-Resistance R<sub>DS(ON)</sub> (V<sub>GS</sub> = 4.5V): < 12 mΩ
  • 100% Avalanche Tested
  • RoHS Compliant

Applications

AI Translation
  • Power switch
  • DC-DC converter