DIODES DMC2990UDJQ-7
| Manufacturer | |
| MPN | DMC2990UDJQ-7 |
| LCSC Part # | C3033299 |
| Packaging | SOT-963 |
| Customer # | |
| Key Attributes | MOSFET N-CH+P-CH ARR 20V 450mA SOT-963 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SOT-963 | |
| Current - Continuous Drain(Id) | 450mA | |
| Pd - Power Dissipation | 350mW | |
| RDS(on) | 990mΩ@4.5V;1.9Ω@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Drain to Source Voltage | 20V | |
| Type | N-Channel + P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.8pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 27.6pF | |
| Gate Charge(Qg) | 500pC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 4pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SOT-963 | |
| Current - Continuous Drain(Id) | 450mA | |
| Pd - Power Dissipation | 350mW | |
| RDS(on) | 990mΩ@4.5V;1.9Ω@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Drain to Source Voltage | 20V |
| Type | Description | |
|---|---|---|
| Type | N-Channel + P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.8pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 27.6pF | |
| Gate Charge(Qg) | 500pC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 4pF |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: General Purpose Interfacing, Switch Power Management Functions, Analog Switch. COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Features
AI Translation
- Low On-Resistance
- Very Low Gate Threshold Voltage, 1.0V Max
- Low Input Capacitance
- Fast Switching Speed
- Ultra-Small Surface Mount Package 1mm x 1mm
- Low Package Profile, 0.45mm Maximum Package Height
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
- Qualified to AEC-Q101 Standards for High Reliability PPAP Capable
Applications
AI Translation
- General Purpose Interfacing
- Switch Power Management Functions
- Analog Switch
In-Stock: 4,930
4,930 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1766 | $ 0.88 |
| 50+ | $ 0.1557 | $ 7.79 |
| 150+ | $ 0.1468 | $ 22.02 |
| 500+ | $ 0.1356 | $ 67.80 |
| 2,500+ | $ 0.1307 | $ 326.75 |
| 5,000+ | $ 0.1277 | $ 638.50 |
Standard Packaging10000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SOT-963 | |
| Current - Continuous Drain(Id) | 450mA | |
| Pd - Power Dissipation | 350mW | |
| RDS(on) | 990mΩ@4.5V;1.9Ω@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Drain to Source Voltage | 20V | |
| Type | N-Channel + P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.8pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 27.6pF | |
| Gate Charge(Qg) | 500pC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 4pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SOT-963 | |
| Current - Continuous Drain(Id) | 450mA | |
| Pd - Power Dissipation | 350mW | |
| RDS(on) | 990mΩ@4.5V;1.9Ω@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Drain to Source Voltage | 20V |
| Type | Description | |
|---|---|---|
| Type | N-Channel + P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.8pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 27.6pF | |
| Gate Charge(Qg) | 500pC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 4pF |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: General Purpose Interfacing, Switch Power Management Functions, Analog Switch. COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Features
AI Translation
- Low On-Resistance
- Very Low Gate Threshold Voltage, 1.0V Max
- Low Input Capacitance
- Fast Switching Speed
- Ultra-Small Surface Mount Package 1mm x 1mm
- Low Package Profile, 0.45mm Maximum Package Height
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
- Qualified to AEC-Q101 Standards for High Reliability PPAP Capable
Applications
AI Translation
- General Purpose Interfacing
- Switch Power Management Functions
- Analog Switch
C3033299 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



