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TECH PUBLIC FDC655BNRoHS

Manufacturer
TECH PUBLICAsian Brands
MPN
FDC655BN
LCSC Part #
C3021102
Packaging
SOT-23-6
Customer #
Key Attributes
MOSFET 30V 6A SOT-23-6
Datasheetpdf iconTECH PUBLIC FDC655BN
In-Stock: 6,220
6,220 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.11$ 0.55
50+$ 0.0884$ 4.42
150+$ 0.0776$ 11.64
500+$ 0.0695$ 34.75
3,000+$ 0.0631$ 189.30
6,000+$ 0.0598$ 358.80
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTECH PUBLIC
PackagingSOT-23-6
Drain to Source Voltage30V
Output Capacitance(Coss)55pF
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)32pF
RDS(on)32mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)345pF
Gate Charge(Qg)4.1nC@4.5V
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This power MOSFET is fabricated using advanced planar stripe DMOS technology. This advanced technology is specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency switch-mode power supplies and active power factor correction based on half-bridge topologies.

Features

AI Translation
  • Vds = 30V
  • Id = 6A
  • RDS(ON) < 23mΩ
  • Vgs @10V, RDS(ON) < 32mΩ
  • Vgs @4.5V

Applications

AI Translation
  • Load/Power Switching
  • Interfacing Switching
  • Battery Management for Ultra Small Portable Electronics
  • Logic Level Shift