EIC MMBT6517BEC
| Manufacturer | |
| MPN | MMBT6517BEC |
| LCSC Part # | C3015264 |
| Packaging | TO-236 |
| Customer # | |
| Key Attributes | TRANS NPN 350V 500mA TO-236 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | EIC | |
| Packaging | TO-236 | |
| Current - Collector Cutoff | 50nA | |
| Transition frequency(fT) | 200MHz | |
| Collector - Emitter Voltage VCEO | 350V | |
| DC Current Gain | 200 | |
| Emitter-Base Voltage VEBO | 6V | |
| Pd - Power Dissipation | 200mW | |
| Current - Collector(Ic) | 500mA | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 1V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | EIC | |
| Packaging | TO-236 | |
| Current - Collector Cutoff | 50nA | |
| Transition frequency(fT) | 200MHz | |
| Collector - Emitter Voltage VCEO | 350V | |
| DC Current Gain | 200 |
| Type | Description | |
|---|---|---|
| Emitter-Base Voltage VEBO | 6V | |
| Pd - Power Dissipation | 200mW | |
| Current - Collector(Ic) | 500mA | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 1V |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. On special request, these transistors can be manufactured in different pin configurations.
Applications
AI Translation
- switching
- AF amplifier
In-Stock: 1,979
1,979 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.0659 | $ 0.07 |
| 10+ | $ 0.0527 | $ 0.53 |
| 30+ | $ 0.0462 | $ 1.39 |
| 100+ | $ 0.0412 | $ 4.12 |
| 500+ | $ 0.0373 | $ 18.65 |
| 1,000+ | $ 0.0353 | $ 35.30 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | EIC | |
| Packaging | TO-236 | |
| Current - Collector Cutoff | 50nA | |
| Transition frequency(fT) | 200MHz | |
| Collector - Emitter Voltage VCEO | 350V | |
| DC Current Gain | 200 | |
| Emitter-Base Voltage VEBO | 6V | |
| Pd - Power Dissipation | 200mW | |
| Current - Collector(Ic) | 500mA | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 1V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | EIC | |
| Packaging | TO-236 | |
| Current - Collector Cutoff | 50nA | |
| Transition frequency(fT) | 200MHz | |
| Collector - Emitter Voltage VCEO | 350V | |
| DC Current Gain | 200 |
| Type | Description | |
|---|---|---|
| Emitter-Base Voltage VEBO | 6V | |
| Pd - Power Dissipation | 200mW | |
| Current - Collector(Ic) | 500mA | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 1V |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. On special request, these transistors can be manufactured in different pin configurations.
Applications
AI Translation
- switching
- AF amplifier
C3015264 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
