LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
2% OFF
VISHAY SI1013CX-T1-GE3 product image
  • SI1013CX-T1-GE3 thumbnail 1
  • SI1013CX-T1-GE3 thumbnail 2
  • SI1013CX-T1-GE3 thumbnail 3
  • Pinout
  • Footprint
Images for reference only

VISHAY SI1013CX-T1-GE3RoHS

Manufacturer
MPN
SI1013CX-T1-GE3
LCSC Part #
C3013852
Packaging
SC-89
Customer #
Key Attributes
MOSFET P-CH 20V 0.45A SC-89
Datasheetpdf iconVISHAY SI1013CX-T1-GE3
In-Stock: 1,145
1,145 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1756$ 0.1721$ 0.86
50+$ 0.1397$ 0.1370$ 6.85
150+$ 0.1244$ 0.1220$ 18.30
500+$ 0.1052$ 0.1031$ 51.55
3,000+$ 0.0967$ 0.0948$ 284.40
6,000+$ 0.0915$ 0.0897$ 538.20
Standard Packaging3000/Full Reel
Better price for more quantity?
$

Products Specifications

Show similar products (0) >
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVISHAY
PackagingSC-89
Drain to Source Voltage20V
Output Capacitance(Coss)15pF
Current - Continuous Drain(Id)450mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation190mW
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)1.5Ω@1.8V
Number1 P-Channel
Input Capacitance(Ciss)45pF
Gate Charge(Qg)1nC@4.5V
TypeP-Channel

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

AP10G006N incorporates advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation down to 4.5V gate voltage. The device is suitable for battery protection or other switching applications.

Features

AI Translation
  • TrenchFET power MOSFET
  • 100 % Rg tested
  • Typical ESD protection: 1000 V (HBM)
  • Fast switching speed

Applications

AI Translation
  • Load / power switch for portable devices
  • Drivers: relays, solenoids, displays
  • Battery operated systems