VISHAY SI1013CX-T1-GE3
| Manufacturer | |
| MPN | SI1013CX-T1-GE3 |
| LCSC Part # | C3013852 |
| Packaging | SC-89 |
| Customer # | |
| Key Attributes | MOSFET P-CH 20V 0.45A SC-89 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | SC-89 | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 15pF | |
| Current - Continuous Drain(Id) | 450mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 190mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| RDS(on) | 1.5Ω@1.8V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 45pF | |
| Gate Charge(Qg) | 1nC@4.5V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
AP10G006N incorporates advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation down to 4.5V gate voltage. The device is suitable for battery protection or other switching applications.
Features
AI Translation
- TrenchFET power MOSFET
- 100 % Rg tested
- Typical ESD protection: 1000 V (HBM)
- Fast switching speed
Applications
AI Translation
- Load / power switch for portable devices
- Drivers: relays, solenoids, displays
- Battery operated systems
In-Stock: 1,145
1,145 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1756$ 0.1721 | $ 0.86 |
| 50+ | $ 0.1397$ 0.1370 | $ 6.85 |
| 150+ | $ 0.1244$ 0.1220 | $ 18.30 |
| 500+ | $ 0.1052$ 0.1031 | $ 51.55 |
| 3,000+ | $ 0.0967$ 0.0948 | $ 284.40 |
| 6,000+ | $ 0.0915$ 0.0897 | $ 538.20 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | SC-89 | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 15pF | |
| Current - Continuous Drain(Id) | 450mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 190mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| RDS(on) | 1.5Ω@1.8V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 45pF | |
| Gate Charge(Qg) | 1nC@4.5V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
AP10G006N incorporates advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation down to 4.5V gate voltage. The device is suitable for battery protection or other switching applications.
Features
AI Translation
- TrenchFET power MOSFET
- 100 % Rg tested
- Typical ESD protection: 1000 V (HBM)
- Fast switching speed
Applications
AI Translation
- Load / power switch for portable devices
- Drivers: relays, solenoids, displays
- Battery operated systems
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



