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MSKSEMI AO4612-MS product image
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MSKSEMI AO4612-MSRoHS

Manufacturer
MSKSEMIAsian Brands
MPN
AO4612-MS
LCSC Part #
C3008145
Packaging
SOP-8
Customer #
Key Attributes
MOSFET N-CH+P-CH ARR 60V 5A SOP-8
Datasheetpdf iconMSKSEMI AO4612-MS
In-Stock: 1,295
1,295 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.2012$ 0.1811$ 0.91
50+$ 0.1583$ 0.1425$ 7.13
150+$ 0.1399$ 0.1260$ 18.90
500+$ 0.1169$ 0.1053$ 52.65
3,000+$ 0.1016$ 0.0915$ 274.50
6,000+$ 0.0955$ 0.0860$ 516.00
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMSKSEMI
PackagingSOP-8
Drain to Source Voltage60V;60V
Output Capacitance(Coss)148pF;51pF
Current - Continuous Drain(Id)5A;4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation1.5W;1.5W
RDS(on)60mΩ@10V;100mΩ@-10V
Reverse Transfer Capacitance (Crss@Vds)7pF;34pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)695pF;715pF
Gate Charge(Qg)5.5nC@10V;5.9nC@4.5V
TypeN-Channel + P-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The AO4612-MS is a high-performance complementary N-channel and P-channel MOSFET with high cell density, delivering excellent on-resistance (RDSON) and gate charge for most synchronous buck converter applications. The AO4612-MS complies with RoHS and green product requirements, with 100% guaranteed EAS through full-function reliability qualification. Ultra-low gate charge 100% guaranteed EAS

  • Green and environmentally friendly device Superior CdV/dt immunity Advanced high cell density trench technology

Features

AI Translation
  • Drain-source voltage (V<sub>DS</sub>) = -30 V
  • Drain current (I<sub>D</sub>) = -15 A (V<sub>GS</sub> = 10 V)
  • On-resistance R<sub>DS(ON)</sub> < 7.50 mΩ (V<sub>GS</sub> = -10 V)
  • On-resistance R<sub>DS(ON)</sub> < 12 mΩ (V<sub>GS</sub> = -4.5 V)