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MSKSEMI 2N7002K product image
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MSKSEMI 2N7002KRoHS

Manufacturer
MSKSEMIAsian Brands
MPN
2N7002K
LCSC Part #
C3008053
Packaging
SOT-23
Customer #
Key Attributes
MOSFET N-CH 60V 0.3A SOT-23
Datasheetpdf iconMSKSEMI 2N7002K
In-Stock: 381,650
381,650 In stock, ships now
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QtyUnit PriceTotal Amount
50+$ 0.0108$ 0.0098$ 0.49
500+$ 0.0084$ 0.0076$ 3.80
3,000+$ 0.0072$ 0.0065$ 19.50
6,000+$ 0.0064$ 0.0058$ 34.80
24,000+$ 0.0057$ 0.0052$ 124.80
51,000+$ 0.0053$ 0.0048$ 244.80
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMSKSEMI
PackagingSOT-23
Drain to Source Voltage60V
Output Capacitance(Coss)26pF
Current - Continuous Drain(Id)300mA
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)2.2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)38pF
Gate Charge(Qg)5.6nC@10V

Additional Information

TypeDetails
Minimum50
Multiple50
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This high-voltage N-channel power MOSFET belongs to the MDmesh™ DM2 fast-recovery diode series. It features an extremely low recovery charge Qrr and recovery time trr, along with low on-resistance RDS(on), making it suitable for demanding high-efficiency converters and ideal for bridge topologies and zero-voltage switching (ZVS) phase-shift converters.

Features

AI Translation
  • 60V, 0.3A, RDS(ON) = 2.2Ω@VGS = 10V
  • Improved dv/dt capability
  • Fast switching
  • Green Device Available
  • G-S ESD Protection Diode Embedded
  • ESD protected up to 2KV

Applications

AI Translation
  • Motor Drive
  • Power Tools
  • LED Lighting