MSKSEMI 2N7002K
| Manufacturer | MSKSEMIAsian Brands |
| MPN | 2N7002K |
| LCSC Part # | C3008053 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 0.3A SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MSKSEMI | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 26pF | |
| Current - Continuous Drain(Id) | 300mA | |
| Operating Temperature - | -50℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 350mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF | |
| RDS(on) | 2.2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 38pF | |
| Gate Charge(Qg) | 5.6nC@10V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 50 |
| Multiple | 50 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This high-voltage N-channel power MOSFET belongs to the MDmesh™ DM2 fast-recovery diode series. It features an extremely low recovery charge Qrr and recovery time trr, along with low on-resistance RDS(on), making it suitable for demanding high-efficiency converters and ideal for bridge topologies and zero-voltage switching (ZVS) phase-shift converters.
Features
AI Translation
- 60V, 0.3A, RDS(ON) = 2.2Ω@VGS = 10V
- Improved dv/dt capability
- Fast switching
- Green Device Available
- G-S ESD Protection Diode Embedded
- ESD protected up to 2KV
Applications
AI Translation
- Motor Drive
- Power Tools
- LED Lighting
In-Stock: 381,650
381,650 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 50+ | $ 0.0108$ 0.0098 | $ 0.49 |
| 500+ | $ 0.0084$ 0.0076 | $ 3.80 |
| 3,000+ | $ 0.0072$ 0.0065 | $ 19.50 |
| 6,000+ | $ 0.0064$ 0.0058 | $ 34.80 |
| 24,000+ | $ 0.0057$ 0.0052 | $ 124.80 |
| 51,000+ | $ 0.0053$ 0.0048 | $ 244.80 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MSKSEMI | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 26pF | |
| Current - Continuous Drain(Id) | 300mA | |
| Operating Temperature - | -50℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 350mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF | |
| RDS(on) | 2.2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 38pF | |
| Gate Charge(Qg) | 5.6nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 50 |
| Multiple | 50 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This high-voltage N-channel power MOSFET belongs to the MDmesh™ DM2 fast-recovery diode series. It features an extremely low recovery charge Qrr and recovery time trr, along with low on-resistance RDS(on), making it suitable for demanding high-efficiency converters and ideal for bridge topologies and zero-voltage switching (ZVS) phase-shift converters.
Features
AI Translation
- 60V, 0.3A, RDS(ON) = 2.2Ω@VGS = 10V
- Improved dv/dt capability
- Fast switching
- Green Device Available
- G-S ESD Protection Diode Embedded
- ESD protected up to 2KV
Applications
AI Translation
- Motor Drive
- Power Tools
- LED Lighting
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



