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Infineon IRF7413TRPBFRoHS

Manufacturer
Infineon
MPN
IRF7413TRPBF
LCSC Part #
C2998
Packaging
SO-8
Customer #
Key Attributes
MOSFET N-CH 30V 13A SO-8
Datasheetpdf iconInfineon IRF7413TRPBF
In-Stock: 322
322 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.7851$ 0.79
10+$ 0.6464$ 6.46
30+$ 0.5771$ 17.31
100+$ 0.5078$ 50.78
500+$ 0.3869$ 193.45
1,000+$ 0.366$ 366.00
Standard Packaging4000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingSO-8
Drain to Source Voltage30V
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)240pF
RDS(on)18mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.8nF
Gate Charge(Qg)79nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging4000
Sales UnitPiece

Introduction

AI Translation

Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.

Features

AI Translation
  • Generation V Technology
  • Ultra Low On-Resistance
  • N-Channel Mosfet
  • Surface Mount
  • Available in Tape & Reel
  • Dynamic dv/dt Rating
  • Fast Switching
  • 100% RG Tested
  • Lead-Free