Winsok Semicon WSF4012B
| Manufacturer | Winsok SemiconAsian Brands |
| MPN | WSF4012B |
| LCSC Part # | C2990861 |
| Packaging | TO-252-4L |
| Customer # | |
| Key Attributes | MOSFET N-CH+P-CH ARR 40V 28A TO-252-4L |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Winsok Semicon | |
| Packaging | TO-252-4L | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 134pF | |
| Current - Continuous Drain(Id) | 28A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 31.3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 102pF | |
| RDS(on) | 42mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 1.415nF | |
| Gate Charge(Qg) | 11.5nC@4.5V | |
| Type | N-Channel + P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Winsok Semicon | |
| Packaging | TO-252-4L | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 134pF | |
| Current - Continuous Drain(Id) | 28A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 31.3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 102pF | |
| RDS(on) | 42mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 1.415nF | |
| Gate Charge(Qg) | 11.5nC@4.5V | |
| Type | N-Channel + P-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The WSF4012B is the highest performance trench Nch and P-ch MOSFET with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The WSF4012B meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.
Features
AI Translation
- Advanced high cell density Trench technology
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- 100% EAS Guaranteed
- Green Device Available
Applications
AI Translation
- High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA
- Networking DC-DC Power System
- CCFL Back-light Inverter
In-Stock: 2,010
2,010 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2113$ 0.1902 | $ 0.95 |
| 50+ | $ 0.2037$ 0.1834 | $ 9.17 |
| 150+ | $ 0.1962$ 0.1766 | $ 26.49 |
| 500+ | $ 0.1751$ 0.1576 | $ 78.80 |
| 2,500+ | $ 0.16$ 0.1440 | $ 360.00 |
| 5,000+ | $ 0.1509$ 0.1359 | $ 679.50 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Winsok Semicon | |
| Packaging | TO-252-4L | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 134pF | |
| Current - Continuous Drain(Id) | 28A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 31.3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 102pF | |
| RDS(on) | 42mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 1.415nF | |
| Gate Charge(Qg) | 11.5nC@4.5V | |
| Type | N-Channel + P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Winsok Semicon | |
| Packaging | TO-252-4L | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 134pF | |
| Current - Continuous Drain(Id) | 28A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 31.3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 102pF | |
| RDS(on) | 42mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 1.415nF | |
| Gate Charge(Qg) | 11.5nC@4.5V | |
| Type | N-Channel + P-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The WSF4012B is the highest performance trench Nch and P-ch MOSFET with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The WSF4012B meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.
Features
AI Translation
- Advanced high cell density Trench technology
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- 100% EAS Guaranteed
- Green Device Available
Applications
AI Translation
- High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA
- Networking DC-DC Power System
- CCFL Back-light Inverter
C2990861 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
