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HGSEMI LM833N product image
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HGSEMI LM833NRoHS

Manufacturer
HGSEMIAsian Brands
MPN
LM833N
LCSC Part #
C2987280
Packaging
DIP-8
Customer #
Key Attributes
Dual Low Noise, Audio Amplifier
Datasheetpdf iconHGSEMI LM833N
In-Stock: 755
755 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
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QtyUnit PriceTotal Amount
5+$ 0.1913$ 0.96
50+$ 0.1424$ 7.12
150+$ 0.1249$ 18.74
500+$ 0.1031$ 51.55
2,000+$ 0.0933$ 186.60
4,000+$ 0.0875$ 350.00
Standard Packaging50/Full Tube
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Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Linear/Amplifiers/Instrumentation, Op Amps, Buffer Amps
ManufacturerHGSEMI
PackagingDIP-8
Output Current-
Number of Channels2
Vos - Input Offset Voltage300uV
Slew Rate7V/us
Input Offset Current(Ios)10nA
Operating Temperature-40℃~+85℃
Ib - Input Bias Current1uA
Common Mode Rejection Ratio(CMRR)100dB
Input Offset Voltage Drift(Vos TC)2uV/℃
Quiescent Current4mA
Gain Bandwidth Product15MHz
Features-
Input Voltage Noise Density4.5nV/√Hz@1kHz
Dual Supply-15V~15V
Rail to Rail-
Single Supply-
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Introduction

AI Translation

LM833 is a standard low-cost monolithic dual general-purpose op-amp based on bipolar technology with innovative high-performance design concepts, optimized for audio system applications. Leveraging high-frequency PNP transistors, the LM833 delivers low voltage noise (4.5 nV/√Hz), 15 MHz gain-bandwidth product, 7.0 V/μs slew rate, 0.3 mV input offset voltage, and 2.0 μV/°C input offset voltage temperature coefficient. The LM833 output stage features no crossover distortion deadband, large output voltage swing, excellent phase margin and gain margin, low open-loop high-frequency output impedance, and symmetrical source/sink AC frequency response. The LM833 operates over an automotive-grade temperature range and is available in plastic DIP8, SOP8, and MSOP8 packages (M and N suffixes).

Features

AI Translation
  • Low voltage noise: 4.5 nV/√Hz
  • High gain bandwidth product: 15 MHz
  • High slew rate: 7.0 V/μs
  • Low input offset voltage: 0.3 mV
  • Low input offset voltage temperature coefficient: 2.0 μV/°C
  • Low distortion: 0.002%
  • Excellent frequency stability
  • Dual supply operation